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Zheng Liang

Zheng Liang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciMachine LearningArtificial IntelligenceComputation and LanguageDatabases

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Published work

5 published item(s)

preprint2022arXiv

A Roadmap for Big Model

With the rapid development of deep learning, training Big Models (BMs) for multiple downstream tasks becomes a popular paradigm. Researchers have achieved various outcomes in the construction of BMs and the BM application in many fields. At present, there is a lack of research work that sorts out the overall progress of BMs and guides the follow-up research. In this paper, we cover not only the BM technologies themselves but also the prerequisites for BM training and applications with BMs, dividing the BM review into four parts: Resource, Models, Key Technologies and Application. We introduce 16 specific BM-related topics in those four parts, they are Data, Knowledge, Computing System, Parallel Training System, Language Model, Vision Model, Multi-modal Model, Theory&Interpretability, Commonsense Reasoning, Reliability&Security, Governance, Evaluation, Machine Translation, Text Generation, Dialogue and Protein Research. In each topic, we summarize clearly the current studies and propose some future research directions. At the end of this paper, we conclude the further development of BMs in a more general view.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Exploring Data and Knowledge combined Anomaly Explanation of Multivariate Industrial Data

The demand for high-performance anomaly detection techniques of IoT data becomes urgent, especially in industry field. The anomaly identification and explanation in time series data is one essential task in IoT data mining. Since that the existing anomaly detection techniques focus on the identification of anomalies, the explanation of anomalies is not well-solved. We address the anomaly explanation problem for multivariate IoT data and propose a 3-step self-contained method in this paper. We formalize and utilize the domain knowledge in our method, and identify the anomalies by the violation of constraints. We propose set-cover-based anomaly explanation algorithms to discover the anomaly events reflected by violation features, and further develop knowledge update algorithms to improve the original knowledge set. Experimental results on real datasets from large-scale IoT systems verify that our method computes high-quality explanation solutions of anomalies. Our work provides a guide to navigate the explicable anomaly detection in both IoT fault diagnosis and temporal data cleaning.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Auto-CASH: Autonomous Classification Algorithm Selection with Deep Q-Network

The great amount of datasets generated by various data sources have posed the challenge to machine learning algorithm selection and hyperparameter configuration. For a specific machine learning task, it usually takes domain experts plenty of time to select an appropriate algorithm and configure its hyperparameters. If the problem of algorithm selection and hyperparameter optimization can be solved automatically, the task will be executed more efficiently with performance guarantee. Such problem is also known as the CASH problem. Early work either requires a large amount of human labor, or suffers from high time or space complexity. In our work, we present Auto-CASH, a pre-trained model based on meta-learning, to solve the CASH problem more efficiently. Auto-CASH is the first approach that utilizes Deep Q-Network to automatically select the meta-features for each dataset, thus reducing the time cost tremendously without introducing too much human labor. To demonstrate the effectiveness of our model, we conduct extensive experiments on 120 real-world classification datasets. Compared with classical and the state-of-art CASH approaches, experimental results show that Auto-CASH achieves better performance within shorter time.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

There have been continuous efforts to seek for novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and the following Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast combined with atomic force microscope (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows monotonic discrete increase with the decrease of phosphorene thickness down to monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor efficiently. This work for monolayer phosphorene fabrication and thickness determination will facilitates the research of phosphorene.

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preprint2014arXiv

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high temperature vacuum annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access