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Zhefeng Lou

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3 publications

preprint2020arXiv

Bulk Superconductivity in the Dirac Semimetal TlSb

A feasible strategy to realize the Majorana fermions is searching for a simple compound with both bulk superconductivity and Dirac surface states. In this paper, we performed calculations of electronic band structure, the Fermi surface and surface states, as well as measured the resistivity, magnetization, specific heat for TlSb compound with a CsCl-type structure. The band structure calculations show that TlSb is a Dirac semimetal when spin-orbit coupling is taken into account. Meanwhile, we first found that TlSb is a type-II superconductor with TcT_c = 4.38 K, Hc1H_{c1}(0) = 148 Oe, Hc2H_{c2}(0) = 1.12 T and κGLκ_{GL} = 10.6, and confirmed it to be a moderately coupled s-wave superconductor. Although we can not determine which bands near the Fermi level EFE_F to be responsible for superconductivity, its coexistence with the topological surface states implies that TlSb compound may be a simple material platform to realize the fault-tolerant quantum computations.

preprint2020arXiv

Magnetoresistance and Kondo effect in the nodal-line semimetal VAs2_2

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity ρxx(T,H)ρ_{xx}(T,H), Hall resistivity ρxy(T,H)ρ_{xy}(T,H), and magnetic susceptibility as a function of temperature and various magnetic fields for VAs2_2 with a monoclinic crystal structure. The band structure calculations show that VAs2_2 is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in ρxx(T)ρ_{xx}(T) measured at HH = 0 demonstrates that an additional magnetic impurity (V4+^{4+}, SS = 1/2) occurs in VAs2_2 single crystals, evidenced by both the fitting of ρxx(T)ρ_{xx}(T) data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of ρxx(T)ρ_{xx}(T) emerge also in VAs2_2, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V (3d34s23d^3 4s^2) element as a platform for studying the influence of magnetic impurities to the topological properties.

preprint2020arXiv

Metamagnetic transitions and anomalous magnetoresistance in EuAg4_4As2_2 single crystal

In this paper, the magnetic and transport properties were systematically studied for EuAg4_4As2_2 single crystals, crystallizing in a centrosymmetric trigonal CaCu4_4P2_2 type structure. It was confirmed that two magnetic transitions occur at T\textit{T}N1_{N1} = 10 K and T\textit{T}N2_{N2} = 15 K, respectively. With the increasing field, the two transitions are noticeably driven to lower temperature. At low temperatures, applying a magnetic field in the ab\textit{ab} plane induces two successive metamagnetic transitions. For both H\textit{H} ∥\parallel ab\textit{ab} and H\textit{H} ∥\parallel c\textit{c}, EuAg4_4As2_2 shows a positive, unexpected large magnetoresistance (up to 202\%) at low fields below 10 K, and a large negative magnetoresistance (up to -78\%) at high fields/intermediate temperatures. Such anomalous field dependence of magnetoresistance may have potential application in the future magnetic sensors. Finally, the magnetic phase diagrams of EuAg4_{4}As2_{2} were constructed for both H\textit{H} ∥\parallel ab\textit{ab} and H\textit{H} ∥\parallel c\textit{c}.

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