Magnetoresistance and Kondo effect in the nodal-line semimetal VAs2
We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity ρxx(T,H), Hall resistivity ρxy(T,H), and magnetic susceptibility as a function of temperature and various magnetic fields for VAs2 with a monoclinic crystal structure. The band structure calculations show that VAs2 is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in ρxx(T) measured at H = 0 demonstrates that an additional magnetic impurity (V4+, S = 1/2) occurs in VAs2 single crystals, evidenced by both the fitting of ρxx(T) data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of ρxx(T) emerge also in VAs2, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V (3d34s2) element as a platform for studying the influence of magnetic impurities to the topological properties.