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Jianhua Du

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Published work

9 published item(s)

preprint2022arXiv

Superconductivity in the nodal-line compound La$_3$Pt$_3$Bi$_4$

Owing to the specific topological states in nodal-line semimetals, novel topological superconductivity is expected to emerge in these systems. In this letter, by combination of the first-principles calculations and resistivity, susceptibility and specific heat measurements, we demonstrate that La$_3$Pt$_3$Bi$_4$ is a topologically nontrivial nodal-ring semimetal protected by the gliding-mirror symmetry even in the presence of spin-orbit coupling. Meanwhile, we discover bulk superconductivity with a transition temperature of $\sim$1.1 K, and an upper critical field of $\sim$0.41 T. These findings demonstrate that La$_3$Pt$_3$Bi$_4$ provides a material platform for studying novel superconductivity in the nodal-ring system.

preprint2020arXiv

Bulk Superconductivity in the Dirac Semimetal TlSb

A feasible strategy to realize the Majorana fermions is searching for a simple compound with both bulk superconductivity and Dirac surface states. In this paper, we performed calculations of electronic band structure, the Fermi surface and surface states, as well as measured the resistivity, magnetization, specific heat for TlSb compound with a CsCl-type structure. The band structure calculations show that TlSb is a Dirac semimetal when spin-orbit coupling is taken into account. Meanwhile, we first found that TlSb is a type-II superconductor with $T_c$ = 4.38 K, $H_{c1}$(0) = 148 Oe, $H_{c2}$(0) = 1.12 T and $κ_{GL}$ = 10.6, and confirmed it to be a moderately coupled s-wave superconductor. Although we can not determine which bands near the Fermi level $E_F$ to be responsible for superconductivity, its coexistence with the topological surface states implies that TlSb compound may be a simple material platform to realize the fault-tolerant quantum computations.

preprint2020arXiv

Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity $ρ_{xx}(T,H)$, Hall resistivity $ρ_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $ρ_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V$^{4+}$, $S$ = 1/2) occurs in VAs$_2$ single crystals, evidenced by both the fitting of $ρ_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $ρ_{xx}(T)$ emerge also in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties.

preprint2020arXiv

Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal

In this paper, the magnetic and transport properties were systematically studied for EuAg$_4$As$_2$ single crystals, crystallizing in a centrosymmetric trigonal CaCu$_4$P$_2$ type structure. It was confirmed that two magnetic transitions occur at $\textit{T}$$_{N1}$ = 10 K and $\textit{T}$$_{N2}$ = 15 K, respectively. With the increasing field, the two transitions are noticeably driven to lower temperature. At low temperatures, applying a magnetic field in the $\textit{ab}$ plane induces two successive metamagnetic transitions. For both $\textit{H}$ $\parallel$ $\textit{ab}$ and $\textit{H}$ $\parallel$ $\textit{c}$, EuAg$_4$As$_2$ shows a positive, unexpected large magnetoresistance (up to 202\%) at low fields below 10 K, and a large negative magnetoresistance (up to -78\%) at high fields/intermediate temperatures. Such anomalous field dependence of magnetoresistance may have potential application in the future magnetic sensors. Finally, the magnetic phase diagrams of EuAg$_{4}$As$_{2}$ were constructed for both $\textit{H}$ $\parallel$ $\textit{ab}$ and $\textit{H}$ $\parallel$ $\textit{c}$.

preprint2020arXiv

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Quasiparticle interference (QPI) of the electronic states has been widely applied in scanning tunneling microscopy (STM) to analyze the electronic band structure of materials. Single-defect induced QPI reveals defect-dependent interaction between a single atomic defect and electronic states, which deserves special attention. Due to the weak signal of single-defect-induced QPI, the signal-to-noise ratio (SNR) is relatively low in a standard two-dimensional QPI measurement. In this paper, we introduce a projective quasiparticle interference (PQPI) method, in which a one-dimensional measurement is taken along high-symmetry directions centered on a specified defect. We apply the PQPI method to a topological nodal-line semimetal ZrSiS. We focus on two special types of atomic defects that scatter the surface and bulk electronic bands. With enhanced SNR in PQPI, the energy dispersions are clearly resolved along high symmetry directions. We discuss the defect-dependent scattering of bulk bands with the non-symmorphic symmetry-enforced selection rules. Furthermore, an energy shift of the surface floating band is observed and a new branch of energy dispersion (q6) is resolved. This PQPI method can be applied to other complex materials to explore defect-dependent interactions in the future.

preprint2020arXiv

Unconventional superconductivity in the nickel-chalcogenide superconductor, TlNi$_2$Se$_2$

We present the results of a study of the vortex lattice (VL) of the nickel chalcogenide superconductor TlNi2Se2, using small angle neutron scattering. This superconductor has the same crystal symmetry as the iron arsenide materials. Previous work points to it being a two-gap superconductor, with an unknown pairing mechanism. No structural transitions in the vortex lattice are seen in the phase diagram, arguing against d-wave gap symmetry. Empirical fits of the temperature-dependence of the form factor and penetration depth rule out a simple s-wave model, supporting the presence of nodes in the gap function. The variation of the VL opening angle with field is consistent with earlier reports of of multiple gaps.

preprint2015arXiv

Superconductivity in a new layered nickel-selenide CsNi2Se2

The physical properties of CsNi$_{2}$Se$_{2}$ were characterized by electrical resistivity, magnetization and specific heat measurements. We found that the stoichiometric CsNi$_{2}$Se$_{2}$ compound is a superconductor with a transition temperature \textit{T$_{c}$}=2.7K. A large Sommerfeld coefficient $γ$$_{n}$ ($\sim$77.90 mJ/mol$\cdot$K$^{-2}$), was obtained from the normal state electronic specific heat. However, the Kadowaki-Woods ratio of CsNi$_{2}$Se$_{2}$ was estimated to be about 0.041$\times$10$^{-5}$ $μΩ$$\cdot$cm(mol$\cdot$K/mJ)$^{2}$, indicating the absence of strong electron-electron correlations in this compound. In the superconducting state, we found that the zero-field electronic specific heat data, $C_{es}(T)$ (0.5K $\leq$ T $<$ 2.6K), can be well fitted with a two-gap BCS model. The comparison with the results of the density functional theory (DFT) calculations suggested that the large $γ$$_{n}$ in the nickel-selenide superconductors may be related to the large Density of States (DOS) at the fermi surface.

preprint2015arXiv

Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP

After growing successfully TaP single crystal, we measured its longitudinal resistivity (rhoxx) and Hall resistivity (rhoyx) at magnetic fields up to 9T in the temperature range of 2-300K. It was found that at 2K its magnetoresistivity (MR) reaches to 328000 percent, at 300K to 176 percent at 8T, and both do not appear saturation. We confirmed that TaP is indeed a low carrier concentration, hole-electron compensated semimetal, with a high mobility of hole muh=371000 cm2V-1s-1, and found that a magnetic-field-induced metal-insulator transition occurs at room temperature. Remarkably, as a magnetic field (H) is applied in parallel to the electric field (E), the negative MR due to chiral anomaly is observed, and reaches to -3000 percent at 9T without any signature of saturation, too, which distinguishes with other Weyl semimetals (WSMs). The analysis on the Shubnikov-de Haas (SdH) oscillations superimposing on the MR reveals that a nontrivial Berry phase with strong offset of 0.3958 realizes in TaP, which is the characteristic feature of the charge carriers enclosing a Weyl nodes. These results indicate that TaP is a promising candidate not only for revealing fundamental physics of the WSM state but also for some novel applications.

preprint2014arXiv

Camelback-shaped band reconciles heavy electron behavior with weak electronic Coulomb correlations in superconducting TlNi2Se2

Using high-resolution photoemission spectroscopy and first-principles calculations, we characterize superconducting TlNi$_2$Se$_2$ as a material with weak electronic Coulomb correlations leading to a bandwidth renormalization of 1.4. We identify a camelback-shaped band, whose energetic position strongly depends on the selenium height. While this feature is universal in transition metal pnictides, in TlNi$_2$Se$_2$ it lies in the immediate vicinity of the Fermi level, giving rise to a pronounced van Hove singularity. The resulting heavy band mass resolves the apparent puzzle of a large normal-state specific heat coefficient (Phys. Rev. Lett. 112, 207001) in this weakly correlated compound.