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Researcher profile

Zhaojun Li

Zhaojun Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.chem-ph

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Published work

4 published item(s)

preprint2023arXiv

Chemical treatments of Monolayer Transition Metal Dichalcogenides and Their Prospect in Optoelectronic Applications

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remains a challenge, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

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preprint2022arXiv

Photophysical comparison of liquid and mechanically exfoliated WS$_2$ monolayers

Semiconducting transition metal dichalcogenides (TMDs) are desired as active materials in optoelectronic devices due to their strong excitonic effects. They can be exfoliated from their parent layered materials with low-cost and for mass production via a liquid exfoliation method. However, the device application of TMDs prepared by liquid phase exfoliation is limited by their poor photoluminescence quantum efficiencies (PLQE). It is crucial to understand the reason to low PLQE for their practical device development. Here we evaluate the quality of monolayer-enriched liquid phase exfoliated (LPE) WS$_2$ dispersions by systematically investigating their optical and photophysical properties and contrasting with mechanically exfoliated (ME) WS2 monolayers. An in-depth understanding of the exciton dynamics is gained with ultrafast pump-probe measurements. We reveal that the energy transfer between monolayer and few-layers in LPE WS$_2$ dispersions is a substantial reason for their quenched PL. In addition, we show that LPE WS$_2$ is promising to build high performance optoelectronic devices with excellent optical quality.

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preprint2020arXiv

Directed Energy Transfer from Monolayer $WS_{2}$ to NIR Emitting PbS-CdS Quantum Dots

Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer unique charge and energy transfer pathways which could form the basis of novel optoelectronic devices. To date, most has focused on charge transfer and energy transfer from QDs to TMDs, i.e. from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulphide ($WS_{2}$) to near infrared (NIR) emitting lead sulphide-cadmium sulphide (PbS-CdS) QDs. The high absorption cross section of $WS_{2}$ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems, make this an interesting donor-acceptor system that can effectively use the WS2 as an antenna and the QD as a tuneable emitter, in this case downshifting the emission energy over hundreds of meV. We study the energy transfer process using photoluminescence excitation (PLE) and PL microscopy, and show that 58% of the QD PL arises due to energy transfer from the $WS_{2}$. Time resolved photoluminescence (TRPL) microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the $WS_{2}$, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tuneable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD/QD heterostructures could have applications in light emitting technologies, artificial light harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications

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preprint2020arXiv

The bright side of defects in MoS$_2$ and WS$_2$ and a generalizable chemical treatment protocol for defect passivation

Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defects via improved materials growth or post-growth passivation. Here, using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we demonstrate that sulfur vacancy defects act as exciton traps. Current chemical treatments do not passivate these sites, leading to decreased mobility and trap-limited photoluminescence. We present a generalizable treatment protocol based on the use of passivating agents such as thiols or sulfides in combination with a Lewis acid to passivate sulfur vacancies in monolayer MoS$_2$ and WS$_2$, increasing photoluminescence up to 275 fold, while maintaining mobilities. Our findings suggest a route for simple and rational defect engineering strategies, where the passivating agent varies the electronic properties, thereby allowing the design of new heterostructures.

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