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Géraud Delport

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Published work

5 published item(s)

preprint2020arXiv

Directed Energy Transfer from Monolayer $WS_{2}$ to NIR Emitting PbS-CdS Quantum Dots

Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer unique charge and energy transfer pathways which could form the basis of novel optoelectronic devices. To date, most has focused on charge transfer and energy transfer from QDs to TMDs, i.e. from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulphide ($WS_{2}$) to near infrared (NIR) emitting lead sulphide-cadmium sulphide (PbS-CdS) QDs. The high absorption cross section of $WS_{2}$ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems, make this an interesting donor-acceptor system that can effectively use the WS2 as an antenna and the QD as a tuneable emitter, in this case downshifting the emission energy over hundreds of meV. We study the energy transfer process using photoluminescence excitation (PLE) and PL microscopy, and show that 58% of the QD PL arises due to energy transfer from the $WS_{2}$. Time resolved photoluminescence (TRPL) microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the $WS_{2}$, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tuneable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD/QD heterostructures could have applications in light emitting technologies, artificial light harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications

preprint2020arXiv

Directing random lasing emission using cavity exciton-polaritons

Random lasing is an intriguing phenomenon occurring in disordered structures with optical gain. In such lasers, the scattering of light provides the necessary feedback for lasing action. Because of the light scattering, the random lasing systems emit in all the directions in contrast with the directional emission of the conventional lasers. While this property can be desired in some cases, the control of the emission directionality remains required for most of the applications. Besides, it is well known that the excitation of cavity exciton-polaritons is intrinsically directional. Each wavelength (energy) of the cavity polariton, which is a superposition of an excitonic state and a cavity mode, corresponds to a well-defined propagation direction. We demonstrate in this article that coupling the emission of a 2D random laser with a cavity polaritonic resonance permits to control the direction of emission of the random laser. This results in a directional random lasing whose emission angle with respect to the microcavity axis can be tuned in a large range of angles by varying the cavity detuning. The emission angles reached experimentally in this work are 15.8$^\circ$ and 22.4$^\circ$.

preprint2020arXiv

The bright side of defects in MoS$_2$ and WS$_2$ and a generalizable chemical treatment protocol for defect passivation

Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defects via improved materials growth or post-growth passivation. Here, using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we demonstrate that sulfur vacancy defects act as exciton traps. Current chemical treatments do not passivate these sites, leading to decreased mobility and trap-limited photoluminescence. We present a generalizable treatment protocol based on the use of passivating agents such as thiols or sulfides in combination with a Lewis acid to passivate sulfur vacancies in monolayer MoS$_2$ and WS$_2$, increasing photoluminescence up to 275 fold, while maintaining mobilities. Our findings suggest a route for simple and rational defect engineering strategies, where the passivating agent varies the electronic properties, thereby allowing the design of new heterostructures.

preprint2018arXiv

Room temperature cavity polaritons with 3D hybrid perovskite - Towards low-cost polaritonic devices

Hybrid halide perovskites are now considered as low-cost materials for contemporary research in photovoltaics and nanophotonics. In particular, because these materials can be solution processed, they represent a great hope for obtaining low-cost devices. While the potential of 2D layered hybrid perovskites for polaritonic devices operating at room temperature has been demonstrated in the past, the potential of the 3D perovskites has been much less explored for this particular application. Here, we report the strong exciton-photon coupling with 3D bromide hybrid perovskite. Cavity polaritons are experimentallly demonstrated from both reflectivity and photoluminescence experiments, at room temperature, in a 3$λ$/2 planar microcavity containing a large surface spin-coated $CH_3NH_3PbBr_3$ thin film. A microcavity quality factor of 92 was found and a large Rabi splitting of 70 meV was measured. This result paves the way to low-cost polaritonic devices operating at room temperature, potentially electrically injectable as 3D hybrid perovskites present good transport properties.

preprint2013arXiv

Chirality dependence of the absorption cross-section of carbon nanotubes

The variation of the optical absorption of carbon nanotubes with their geometry has been a long standing question at the heart of both metrological and applicative issues, in particular because optical spectroscopy is one of the primary tools for the assessment of the chiral species abundance of samples. Here, we tackle the chirality dependence of the optical absorption with an original method involving ultra-efficient energy transfer in porphyrin/nanotube compounds that allows uniform photo-excitation of all chiral species. We measure the absolute absorption cross-section of a wide range of semiconducting nanotubes at their S22 transition and show that it varies by up to a factor of 2.2 with the chiral angle, with type I nanotubes showing a larger absorption. In contrast, the luminescence quantum yield remains almost constant.