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Researcher profile

Zhaohao Wang

Zhaohao Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging Technologiesphysics.app-phArtificial Intelligencecond-mat.mtrl-scieess.SPHardware Architecture

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Published work

6 published item(s)

preprint2022arXiv

Comparison research on binary relations based on transitive degrees and cluster degrees

Interval-valued information systems are generalized models of single-valued information systems. By rough set approach, interval-valued information systems have been extensively studied. Authors could establish many binary relations from the same interval-valued information system. In this paper, we do some researches on comparing these binary relations so as to provide numerical scales for choosing suitable relations in dealing with interval-valued information systems. Firstly, based on similarity degrees, we compare the most common three binary relations induced from the same interval-valued information system. Secondly, we propose the concepts of transitive degree and cluster degree, and investigate their properties. Finally, we provide some methods to compare binary relations by means of the transitive degree and the cluster degree. Furthermore, we use these methods to analyze the most common three relations induced from Face Recognition Dataset, and obtain that $RF_{B} ^λ$ is a good choice when we deal with an interval-valued information system by means of rough set approach.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" problems. To resolve those problems, processing-in-memory (PIM) architectures are developed to bring computation logic in or near memory to alleviate the bandwidth limitations during data transmission. NAND-like spintronics memory (NAND-SPIN) is one kind of promising magnetoresistive random-access memory (MRAM) with low write energy and high integration density, and it can be employed to perform efficient in-memory computation operations. In this work, we propose a NAND-SPIN-based PIM architecture for efficient convolutional neural network (CNN) acceleration. A straightforward data mapping scheme is exploited to improve the parallelism while reducing data movements. Benefiting from the excellent characteristics of NAND-SPIN and in-memory processing architecture, experimental results show that the proposed approach can achieve $\sim$2.6$\times$ speedup and $\sim$1.4$\times$ improvement in energy efficiency over state-of-the-art PIM solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Erase-hidden and Drivability-improved Magnetic Non-Volatile Flip-Flops with NAND-SPIN Devices

Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF thanks to its low power, high speed, good CMOS compatibility, etc. In this paper, we propose a novel magnetic NVFF based on an emerging memory device called NAND-SPIN. The data writing of NAND-SPIN is achieved by successively applying two unidirectional currents, which respectively generate the spin orbit torque (SOT) and spin transfer torque (STT) for erase and programming operations. This characteristic allows us to design an erase-hidden and drivability-improved magnetic NVFF. Furthermore, more design flexibility could be obtained since the backup operation of the proposed NVFF is not limited by the inherent slave latch. Simulation results show that our proposed NVFF achieves performance improvement in terms of power, delay and area, compared with conventional slave-latch-driven SOT-NVFF designs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest to both academia and industry. Here we propose a novel field-free deterministic magnetization switching in a regular magnetic tunnel junction (MTJ) by using two currents sequentially passing interlaced paths, with less requirements of manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed schema is validated through both macrospin and micromagnetic simulation. The influences of field-like torque and Dzyaloshinskii-Moriya interaction (DMI) effect are further researched. Our proposed schema shows good scalability and is expected to realize novel digital logic and even computing-in-memory platform.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theoretical Conditions for Field-free Magnetization Switching Induced by Spin-orbit Torque and Dzyaloshinskii-Moriya Interaction

Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism only occurs under certain conditions which have not been well discussed. In this letter, it is found that the ratio of domain wall width to diameter of nanodots could be utilized as a criteria for judging this mechanism. Influences of different magnetic parameters are studied, including exchange constant, DMI magnitude and field-like toque, etc. Besides, we reveal the importance of the shrinkage of magnetic domain wall surface energy for metastable states. Our work provides guidelines to the experiments on the DMI-induced field-free magnetization switching, and also offers a new way for the design of SOT-based memory or logic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Optical control of magnetism in NiFe/VO2 heterostructures

Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realize phase-transition based optical control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations in electrical conductivity (55%), coercivity (60%), and magnetic anisotropy (33.5%). Further analyses indicate that interfacial strain coupling plays a crucial role in this modulation. Utilizing this optically controlled magnetism modulation feature, programmable Boolean logic gates (AND, OR, NAND, NOR, XOR, NXOR and NOT) for high-speed and low-power data processing are demonstrated based on this engineered heterostructure. As a demonstration of phase-transition spintronics, this work may pave the way for next-generation electronics in the post-Moore era.

0 citations0 reviewsNo code linkedOpen access