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Z. X. Tian

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Published work

2 published item(s)

preprint2012arXiv

Helium under high pressure: A comparative study of all-electron and pseudopotential methods within density functional theory

We have calculated the ground state electronic structure of He under pressure from 0 to 1500 GPa using both all-electron full-potential and pseudopotential methods based on the density functional theory (DFT). We find that throughout this pressure range, pseudopotentials yield essentially the same energy-volume curve for all of bcc, fcc, and hcp configurations as does the full-potential method, a strong indication that pseudopotential approximation works well for He both as the common element in some giant planets and as detrimental impurities in fusion reactor materials. The hcp lattice is always the most stable structure and bcc the least stable one. Since the energy preference of hcp over fcc and bcc is within 0.01 eV below 100 GPa and about 0.1 eV at 1500 GPa, on the same order of the error bar in local or semi-local density approximations in DFT, phase transitions can only be discussed with more precise description of electron correlation in Quantum Monte Carlo or DFT-based GW methods.

preprint2010arXiv

Distribution of doped Mn at the Σ3 (112) grain boundary in Ge

Using first-principles density functional theory method, we have investigated the distribution and magnetism of doped Mn atoms in the vicinity of the 3 (112) grain boundary in Ge. We find that at low concentration, the substitutional sites are energetically favorable over the interstitial ones for Mn. The binding energy of Mn varies with lattice sites in the boundary region, and hence a non-uniform distribution of Mn nears the boundary. However, the average of their segregation energy is quite small, thus no remarkable grain boundary segregation of Mn is predicted. Due to volume expansion at the grain boundary, the spin polarization of Mn is slightly enhanced. Overall, we find that the magnetism of Mn-doped Ge is not sensitively dependent on the grain structure.