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W. Xiao

W. Xiao contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci astro-ph.CO

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preprint2014arXiv

Sources of n-type conductivity in GaInO3

Using hybrid density functional theory, we investigated formation energies and transition energies of possible donor-like defects in GaInO3, with the aim of exploring the sources of the experimentally observed n-type conductivity in this material. We predicted that O vacancies are deep donors; interstitial Ga and In are shallow donors but with rather high formation energies (>2.5 eV). Thus these intrinsic defects cannot cause high levels of n-type conductivity. However, ubiquitous H impurities existing in samples can act as shallow donors. As for extrinsic dopants, substitutional Sn and Ge are shown to act as effective donor dopants and can give rise to highly n-type conductive GaInO3; while substitutional N behaviors as a compensating center. Our results provide a consistent explanation of experimental observations.

preprint2012arXiv

Helium under high pressure: A comparative study of all-electron and pseudopotential methods within density functional theory

We have calculated the ground state electronic structure of He under pressure from 0 to 1500 GPa using both all-electron full-potential and pseudopotential methods based on the density functional theory (DFT). We find that throughout this pressure range, pseudopotentials yield essentially the same energy-volume curve for all of bcc, fcc, and hcp configurations as does the full-potential method, a strong indication that pseudopotential approximation works well for He both as the common element in some giant planets and as detrimental impurities in fusion reactor materials. The hcp lattice is always the most stable structure and bcc the least stable one. Since the energy preference of hcp over fcc and bcc is within 0.01 eV below 100 GPa and about 0.1 eV at 1500 GPa, on the same order of the error bar in local or semi-local density approximations in DFT, phase transitions can only be discussed with more precise description of electron correlation in Quantum Monte Carlo or DFT-based GW methods.

preprint2011arXiv

Role of grain boundary and dislocation loop in H blistering in W: A Density functional theory assessment

We report a first-principles density functional theory study on the role of grain boundary and dislocation loop in H blistering in W. At low temperature, the {\Sugma}3(111) tilt grain boundary, when combined with a vacancy of vanishing formation energy, can trap up to nine H atoms per (1x1) unit in (111) plane. This amount of H weakens the cohesion across the boundary to an extent that a cleavage along the GB is already exothermic. At high temperature, this effect can be still significant. For an infinitely large dislocation loop in (100) plane, four H can be trapped per (1x1) unit even above room temperature, incurring a decohesion strong enough to break the crystal. Our numerical results demonstrate unambiguously the grain boundaries and dislocation loops can serve as precursors of H blistering. In addition, no H2 molecules can be formed in either environment before fracture of W bonds starts, well explaining the H blistering in the absence of voids during non-damaging irradiation.

preprint2011arXiv

Threshold concentration for H blistering in defect free W

Lattice distortion induced by high concentration of H is believed to be precursor of H blistering in single crystalline W (SCW) during H isotope irradiation. However, the critical H concentration needed to trigger bond-breaking of metal atoms presents a challenge to measure. Using density functional theory, we have calculated the formation energy of a vacancy and a self-interstitial atom (SIA) in supersaturated defect-free SCW with various H concentrations. When the ratio of H:W exceeds 1:2, the formation of both vacancies and self-interstitials becomes exothermic, meaning that spontaneous formation of micro-voids which can accommodate molecular H2 will occur. Molecular H2 is not allowed to form, and it is not needed either at the very initial stage of H blistering in SCW. With supersaturated H, the free volume at the vacancy or SIA is greatly smeared out with severe lattice distortion and more H can be trapped than in the dilute H case.

preprint2010arXiv

Distribution of doped Mn at the Σ3 (112) grain boundary in Ge

Using first-principles density functional theory method, we have investigated the distribution and magnetism of doped Mn atoms in the vicinity of the 3 (112) grain boundary in Ge. We find that at low concentration, the substitutional sites are energetically favorable over the interstitial ones for Mn. The binding energy of Mn varies with lattice sites in the boundary region, and hence a non-uniform distribution of Mn nears the boundary. However, the average of their segregation energy is quite small, thus no remarkable grain boundary segregation of Mn is predicted. Due to volume expansion at the grain boundary, the spin polarization of Mn is slightly enhanced. Overall, we find that the magnetism of Mn-doped Ge is not sensitively dependent on the grain structure.