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Z. Galazka

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cond-mat.mtrl-sci hep-ex nucl-ex physics.ins-det

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preprint2021arXiv

Development of cryogenic calorimeters to measure the spectral shape of In-115 beta decay

The spectral shape of forbidden beta-decays is a crucial benchmark for nuclear physics calculations and has important implications also for astroparticle physics experiments. Among the interesting isotopes in this field, $^{115}$In is an excellent candidate, being a primordial nuclide featuring a good compromise among Q-value (497.954 keV) and half-life (4.41$\times$10$^{14}$ yr). In this paper, we propose to exploit a cryogenic calorimeter based on In$_2$O$_3$ crystal to perform a high-precision measurement of the $β$-decay energy spectrum, discussing also the results obtained within a preliminary test of this crystal and the next steps to improve the detector performance.

preprint2020arXiv

Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates

Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the thinner films ($\leq$ 330 nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert damping parameter as determined from ferromagnetic resonance measurements. High resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain-relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films.

preprint2015arXiv

Comparative study of the electronic structures of the In and Sn/In2O3 (111) interfaces

The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic indium on In2O3 (111) single crystals, we detected the formation of a free-electron like band of effective mass (0.38+-0.05) m0. At low coverages, metallic In shifts the Fermi level of In2O3 to higher energies and a new electronic state forms at the metal/semiconductor interface. This state of two-dimensional character (2D-electron gas) is completely responsible for the electrical conduction in In2O3 (111) at the surface region and has a band dispersion, which does not correspond to the previously found surface accumulation layers in this material. Despite the similarity of the electronic properties of In and Sn, a larger downward banding was observed by Sn coverage, which was not accompanied by the appearance of the surface state.