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Source author record

Yuyuan Qin

Yuyuan Qin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.quant-gas

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Published work

6 published item(s)

preprint2021arXiv

Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices

On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samples are desired. However, common external decoration often introduces extrinsic Rashba-type SOI and simultaneous impurity scattering. Here we show, by the EDTA-Dy molecule decorating, the Kane-Mele type SOI is mimicked with even improved carrier mobility. It is evidenced by the suppressed weak localization at equal carrier densities and simultaneous Elliot-Yafet spin relaxation. The extracted spin scattering time is monotonically dependent on the carrier elastic scattering time, where the Elliot-Yafet plot gives the interaction strength of 3.3 meV. Improved quantum Hall plateaus can be even seen after the external operation. This is attributed to the spin-flexural phonon coupling induced by the enhanced graphene ripples, as revealed by the in-plane magnetotransport measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced quantum coherence in graphene caused by Pd cluster deposition

We report on the unexpected increase in the dephasing lengths of a graphene sheet caused by the deposition of Pd nanoclusters, as demonstrated by weak localization measurements. The dephasing lengths reached saturated values at low temperatures. Theoretical calculations indicate the p-type charge transfer from the Pd clusters, which contributes more carriers. The saturated values of dephasing lengths often depend on both the carrier concentration and mean free path. Although some impurities are increased as revealed by decreased mobilities, the intense charge transfer leads to the improved saturated values and subsequent improved dephasing lengths.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes

Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of the topological surface states on the exfoliated Bi2Te3 microflakes by a flux period of h/2e in their magnetoresistance oscillations and its weak field character. Both the osillations with the period of h/e and h/2e are observed. The h/2e-period AAS oscillation gradually dominates with increasing the sample widths and the temperatures. This reveals the transition of the Dirac Fermions' transport to the diffusive regime.

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preprint2012arXiv

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior.

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preprint2010arXiv

Two-step splitting the expandable graphite for few-layer graphene

Few-layer graphene sheets are prepared by splitting the expanded graphites using a high-power sonication. Atomic-level quantitative scanning transmission electron microscopy (Q-STEM) is employed to carry out the efficient layer statisticsm, enabling global optimization of the experimental conditions. A two-step splitting mechanism is thus revealed, in which the mean layer number was firstly reduced to less than 20 by heating to 1100°C and then tuned to the few-layer region by a 5-minute 104W/litre sonication. Raman spectroscopic analysis confirms the above mechanism and demonstrates that the sheets are largely free of defects and oxides.

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preprint2010arXiv

Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimization

Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based on the Fresnel law describes the above observation with the constructions of the layer number-wave length-contrast three-dimensional (3D) diagram and the cap thickness-wavelength-contrast 3D diagram, applicative in the current studies of topological insulating flakes.

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