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Yuting Yeo

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Published work

2 published item(s)

preprint2015arXiv

Conductance oscillations induced by ballistic snake states in a graphene heterojunction

The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as quantum Hall effect in bipolar regime, Klein tunneling, and Fabry-Pérot interferences all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have been predicted to induce conductance oscillations, manifesting their twisting nature. However, transport studies along p-n junctions have so far only been performed in low mobility devices. Here, we report the observation of conductance oscillations due to ballistic snake states along a p-n interface in high quality graphene encapsulated by hexagonal boron nitride. These snake states are exceptionally robust as they can propagate over $12$~$μ$m, limited only by the size of our sample, and survive up to at least $120$~K. The ability to guide carriers over a long distance provide a crucial building block for graphene-based electron optics.

preprint2014arXiv

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere

Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two dimensional electronic material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical transport properties and to enable future application of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride crystals can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole trans-conductance characteristics. We attribute these results to the formation of oxygen acceptor states in air-exposed samples which drastically perturb the band structure in comparison to the pristine passivated black phosphorus.