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Barbaros Özyilmaz

Barbaros Özyilmaz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

13 published item(s)

preprint2022arXiv

Heteromoiré Engineering on Magnetic Bloch Transport in Twisted Graphene Superlattices

Localized electrons subject to applied magnetic fields can restart to propagate freely through the lattice in delocalized magnetic Bloch states (MBSs) when the lattice periodicity is commensurate with the magnetic length. Twisted graphene superlattices with moiré wavelength tunability enable experimental access to the unique delocalization in a controllable fashion. Here we report the observation and characterization of high-temperature Brown-Zak (BZ) oscillations which come in two types, 1/B and B periodicity, originating from the generation of integer and fractional MBSs, in the twisted bilayer and trilayer graphene superlattices, respectively. Coexisting periodic-in-1/B oscillations assigned to different moiré wavelengths, are dramatically observed in small-angle twisted bilayer graphene, which may arise from angle-disorder-induced in-plane heteromoiré superlattices. Moreover, the vertical stacking of heteromoiré supercells in double-twisted trilayer graphene results in a mega-sized superlattice. The exotic superlattice contributes to the periodic-in-B oscillation and dominates the magnetic Bloch transport.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Conductance oscillations induced by ballistic snake states in a graphene heterojunction

The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as quantum Hall effect in bipolar regime, Klein tunneling, and Fabry-Pérot interferences all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have been predicted to induce conductance oscillations, manifesting their twisting nature. However, transport studies along p-n junctions have so far only been performed in low mobility devices. Here, we report the observation of conductance oscillations due to ballistic snake states along a p-n interface in high quality graphene encapsulated by hexagonal boron nitride. These snake states are exceptionally robust as they can propagate over $12$~$μ$m, limited only by the size of our sample, and survive up to at least $120$~K. The ability to guide carriers over a long distance provide a crucial building block for graphene-based electron optics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus

Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A3g shows a large redshift with increasing thickness; the experimental and theoretical results agreeing well. This thickness dependence is two times larger than that in the chalcogenide materials such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that in graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers, and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP, and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere

Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two dimensional electronic material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical transport properties and to enable future application of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride crystals can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole trans-conductance characteristics. We attribute these results to the formation of oxygen acceptor states in air-exposed samples which drastically perturb the band structure in comparison to the pristine passivated black phosphorus.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate which allows us to achieve high charge carrier (>10^13) density. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities of as low as 1 kΩ for monolayer and 420Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm^2 for all devices studied. Temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Micro-fabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ~30 mV/K at room temperature are observed, which are much larger than those observed in other two dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S~T^1/3 suggesting a two-dimensional variable range hopping mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Length-dependent thermal conductivity in suspended single-layer graphene

Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report experimental measurements and non-equilibrium molecular dynamics simulations of thermal conduction in suspended single layer graphene as a function of both temperature and sample length. Interestingly and in contrast to bulk materials, when temperature at 300K, thermal conductivity keeps increasing and remains logarithmic divergence with sample length even for sample lengths much larger than the average phonon mean free path. This result is a consequence of the two-dimensional nature of phonons in graphene and provides fundamental understanding into thermal transport in two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

An innovative way of etching MoS2: Characterization and mechanistic investigation

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene-Ferroelectric Hybrid Structure for Flexible Transparent Electrodes

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance of graphene is a major constrain for many of these applications. Here we propose a new approach to achieve low sheet resistance in large-scale CVD monolayer graphene using non-volatile ferroelectric polymer gating. In this hybrid structure, large-scale graphene is heavily doped up to 3{\times}1013 cm-2 by non-volatile ferroelectric dipoles, yielding a low sheet resistance of 120 Ω{\Box} at ambient conditions. The graphene-ferroelectric transparent conductors (GFeTCs) exhibit more than 95% transmittance from the visible to the near infrared range owing to the highly transparent nature of the ferroelectric polymer. Together with its excellent mechanical flexibility, chemical inertness and the simple fabrication process of ferroelectric polymers, the proposed GFeTCs represent a new route towards large-scale graphene based transparent electrodes and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport

The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene, opening the prospect for atomically thin optical elements. Indeed, graphene is currently one of the notable players in the intense drive towards bendable, thin, and portable electronic displays, where its intrinsically metallic, optically transparent, and mechanically robust nature are major advantages. Given that the intrinsic transparency of a graphene monolayer is 97.7 %, any small, reproducible, controllable, and potentially reversible modulation of transparency can have a significant impact for graphene as a viable transparent conducting electrode. Even more so, if the degree of modulation is polarization dependent. Here we show that the transparency in the visible range of graphene pre-strained on a Polyethylene terephthalate (PET) substrate exhibits a periodic modulation (0.1 %) as a function of polarization direction, which we interpret as strain-induced optical anisotropy. The degree of anisotropy is varied by reversible external manipulation of the level of pre-strain. The magnitude of strain is monitored independently by optical absorption and Raman spectroscopy, and the experimental observations are consistent with the theoretically expected modification of the optical conductivity of graphene arising from the strain-induced changes in the electronic dispersion of graphene. The strain sensitivity of the optical response of graphene demonstrated in this study can be potentially utilized towards novel ultra-thin optical devices and strain sensing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene for Controlled and Accelerated Osteogenic Differentiation of Human Mesenchymal Stem Cells

Modern tissue engineering strategies combine living cells and scaffold materials to develop biological substitutes that can restore tissue functions. Both natural and synthetic materials have been fabricated for transplantation of stem cells and their specific differentiation into muscles, bones and cartilages. One of the key objectives for bone regeneration therapy to be successful is to direct stem cells' proliferation and to accelerate their differentiation in a controlled manner through the use of growth factors and osteogenic inducers. Here we show that graphene provides a promising biocompatible scaffold that does not hamper the proliferation of human mesenchymal stem cells (hMSCs) and accelerates their specific differentiation into bone cells. The differentiation rate is comparable to the one achieved with common growth factors, demonstrating graphene's potential for stem cell research.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes

We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances.

0 citations0 reviewsNo code linkedOpen access