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Yuping Sun

Yuping Sun appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-conphysics.app-phphysics.optics

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Published work

11 published item(s)

preprint2022arXiv

High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature

The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (> 10^9 cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 um, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Persistent photogenerated state attained by femtosecond laser irradiation of thin $T_d$-MoTe$_2$

Laser excitation has emerged as a means to expose hidden states of matter and promote phase transitions on demand. Such laser induced transformations are often rendered possible owing to the delivery of spatially and/or temporally manipulated light, carrying energy quanta well above the thermal background. Here, we report time-resolved broadband femtosecond (fs) transient absorption measurements on thin flakes of Weyl semimetal candidate $T_d$-MoTe$_2$ subjected to various levels and schemes of fs-photoexcitation. Our results reveal that impulsive fs-laser irradiation alters the interlayer behavior of the low temperature $T_d$ phase as evidenced by the persistent disappearance of its characteristic coherent $^1$A$_1$ $=$ 13 cm$^{-1}$ shear phonon mode. We found that this structural transformation withstands thermal annealing up to 500 K, although it can be reverted to the 1$T$\' phase by fs-laser treatment at room temperature. Our work opens the door to reversible optical control of topological properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation and manipulation of a phase separated state in a charge density wave material

The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the nearly commensurate (NC) to commensurate (C) transition. We perform scanning tunneling microscopy on exfoliated ultrathin flakes of 1T-TaS$_\textrm{2}$ within the NC-C hysteresis window, finding evidence that the observed non-equilibrium phases consist of intertwined, irregularly shaped NC-like and C-like domains. After applying lateral electrical signals to the sample we image changes in the geometric arrangement of the different regions. We use a phase separation model to explore the relationship between electronic inhomogeneity present in ultrathin 1T-TaS$_\textrm{2}$ and its bulk resistivity. These results demonstrate the role of phase competition morphologies in determining the properties of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Generation and detection of coherent longitudinal acoustic waves in ultrathin 1T'-MoTe2

Layered transition metal dichalcogenides have attracted substantial attention owing to their versatile functionalities and compatibility with current nanofabrication technologies. Thus, noninvasive means to determine the mechanical properties of nanometer (nm) thick specimens are of increasing importance. Here, we report on the detection of coherent longitudinal acoustic phonon modes generated by impulsive femtosecond (fs) optical excitation. Broadband fs-transient absorption experiments in 1T'-MoTe2 flakes as a function of thickness (7 nm - 30 nm) yield a longitudinal sound speed of 2990 m/s. In addition, temperature dependent measurements unveil a linear decrease of the normalized Young's modulus with a slope of -0.002 per K and no noticeable change caused by the Td - 1T' structural phase transition or variations in film thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Atomic Lattice Disorder in Charge Density Wave Phases of Exfoliated Dichalcogenides (1T-TaS2)

Charge density waves (CDW) and their concomitant periodic lattice distortions (PLD) govern the electronic properties in many layered transition-metal dichalcogenides. In particular, 1T-TaS2 undergoes a metal-to-insulator phase transition as the PLD becomes commensurate with the crystal lattice. Here we directly image PLDs of the nearly-commensurate (NC) and commensurate (C) phases in thin exfoliated 1T-TaS2 using atomic resolution scanning transmission electron microscopy at room and cryogenic temperature. At low temperatures, we observe commensurate PLD superstructures, suggesting ordering of the CDWs both in- and out-of-plane. In addition, we discover stacking transitions in the atomic lattice that occur via one bond length shifts. Interestingly, the NC PLDs exist inside both the stacking domains and their boundaries. Transitions in stacking order are expected to create fractional shifts in the CDW between layers and may be another route to manipulate electronic phases in layered dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Distinct surface and bulk charge density waves in ultrathin 1T-TaS2

We employ low-frequency Raman spectroscopy to study the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition in 1T-TaS2 ultrathin flakes protected from oxidation. We identify new modes originating from C phase CDW phonons that are distinct from those seen in bulk 1T-TaS2. We attribute these to CDW modes from the surface layers. By monitoring individual modes with temperature, we find that surfaces undergo a separate, low-hysteresis NC-C phase transition that is decoupled from the transition in the bulk layers. This indicates the activation of a secondary phase nucleation process in the limit of weak interlayer interaction, which can be understood from energy considerations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Superconductivity and Charge Density Wave in ZrTe$_{3-x}$Se$_{x}$

Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe$_{3}$ when the long range CDW order is gradually suppressed. Superconducting critical temperature $T_c(x)$ in ZrTe$_{3-x}$Se$_x$ (${0\leq}x\leq0.1$) increases up to 4 K plateau for $0.04$$\leq$$x$$\leq$$0.07$. Further increase in Se content results in diminishing $T_{c}$ and filametary superconductivity. The CDW modes from Raman spectra are observed in $x$ = 0.04 and 0.1 crystals, where signature of ZrTe$_{3}$ CDW order in resistivity vanishes. The electronic-scattering for high $T_{c}$ crystals is dominated by local CDW fluctuations at high temperures, the resistivity is linear up to highest measured $T=300K$ and contributes to substantial in-plane anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant negative thermal expansion covering room temperature in nanocrystalline GaNxMn3

Materials with negative thermal expansion (NTE), which contract upon heating, are of great interest both technically and fundamentally. Here, we report giant NTE covering room temperature in mechanically milled antiperovksite GaNxMn3 compounds. The micrograin GaNxMn3 exhibits a large volume contraction at the antiferromagnetic (AFM) to paramagnetic (PM) (AFM-PM) transition within a temperature window (ΔT) of only a few kelvins. The grain size reduces to ~ 30 nm after slight milling, while ΔT is broadened to 50K. The corresponding coefficient of linear thermal expansion (α) reaches ~ -70 ppm/K, which is almost two times larger than those obtained in chemically doped antiperovskite compounds. Further reducing grain size to ~ 10 nm, ΔT exceeds 100 K and α remains as large as -30 ppm/K (-21 ppm/K) for x = 1.0 (x = 0.9). Excess atomic displacements together with the reduced structural coherence, revealed by high-energy X-ray pair distribution functions, are suggested to delay the AFM-PM transition. By controlling the grain size via mechanically alloying or grinding, giant NTE may also be achievable in other materials with large lattice contraction due to electronic or magnetic phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microscopic evidence for strong periodic lattice distortion in 2D charge-density wave systems

In the quasi-2D electron systems of the layered transition metal dichalcogenides (TMD) there is still a controversy about the nature of the transitions to charge-density wave (CDW) phases, i.e. whether they are described by a Peierls-type mechanism or by a lattice-driven model. By performing scanning tunneling microscopy (STM) experiments on the canonical TMD-CDW systems, we have imaged the electronic modulation and the lattice distortion separately in 2H-TaS$_2$, TaSe$_2$, and NbSe$_2$. Across the three materials, we found dominant lattice contributions instead of the electronic modulation expected from Peierls transitions, in contrast to the CDW states that show the hallmark of contrast inversion between filled and empty states. Our results imply that the periodic lattice distortion (PLD) plays a vital role in the formation of CDW phases in the TMDs and illustrate the importance of taking into account the more complicated lattice degree of freedom when studying correlated electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

New Superconductivity in Layered 1T-TaS2-xSex Single Crystals Fabricated by Chemical Vapor Transport

Layered transition-metal dichalcogenides 1T-TaS2-xSex (0<=x<=2) single crystals have been successfully fabricated by using a chemical vapor transport technique in which Ta locates in octahedral coordination with S and Se atoms. This is the first superconducting example by the substitution of S site, which violates an initial rule based on the fact that superconductivity merely emerges in 1T-TaS2 by applying the high pressure or substitution of Ta site. We demonstrate the appearance of a series of electronic states in 1T-TaS2-xSex with Se content. Namely, the Mott phase melts into a nearly commensurate charge-density-wave (NCCDW) phase, superconductivity in a wide x range develops within the NCCDW state, and finally commensurate charge-density-wave (CCDW) phase reproduces for heavy Se content. The present results reveal that superconductivity is only characterized by robust Ta 5d band, demonstrating the universal nature in 1T-TaS2 systems that superconductivity and NCCDW phase coexist in the real space.

0 citations0 reviewsNo code linkedOpen access