Nearly flat bands in twisted triple bilayer graphene
We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling , twist angle , interlayer potential difference , and top-bottom bilayers sliding vector for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference allows the flattening of bands in t3BG down to ~meV for twist angles regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth ratios in the and parameter space. We also present the expected -valley Chern numbers for the lowest-energy nearly flat bands.