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Yun Wu

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Published work

16 published item(s)

preprint2022arXiv

Sharper Bounds for Proximal Gradient Algorithms with Errors

We analyse the convergence of the proximal gradient algorithm for convex composite problems in the presence of gradient and proximal computational inaccuracies. We derive new tighter deterministic and probabilistic bounds that we use to verify a simulated (MPC) and a synthetic (LASSO) optimization problems solved on a reduced-precision machine in combination with an inaccurate proximal operator. We also show how the probabilistic bounds are more robust for algorithm verification and more accurate for application performance guarantees. Under some statistical assumptions, we also prove that some cumulative error terms follow a martingale property. And conforming to observations, e.g., in \cite{schmidt2011convergence}, we also show how the acceleration of the algorithm amplifies the gradient and proximal computational errors.

preprint2021arXiv

Visualizing band selective enhancement of quasiparticle lifetime in a metallic ferromagnet

Electrons navigate more easily in a background of ordered magnetic moments than around randomly oriented ones. This fundamental quantum mechanical principle is due to their Bloch wave nature and also underlies ballistic electronic motion in a perfect crystal. As a result, a paramagnetic metal that develops ferromagnetic order often experiences a sharp drop in the resistivity. Despite the universality of this phenomenon, a direct observation of the impact of ferromagnetic order on the electronic quasiparticles in a magnetic metal is still lacking. Here we demonstrate that quasiparticles experience a significant enhancement of their lifetime in the ferromagnetic state of the low-density magnetic semimetal EuCd2As2, but this occurs only in selected bands and specific energy ranges. This is a direct consequence of the magnetically induced band splitting and the multi-orbital nature of the material. Our detailed study allows to disentangle different electronic scattering mechanisms due to non-magnetic disorder and magnon exchange. Such high momentum and energy dependence quasiparticle lifetime enhancement can lead to spin selective transport and potential spintronic applications.

preprint2020arXiv

Evidence for large Rashba splitting in PtPb4 from Angle-Resolved Photoemission Spectroscopy

We studied the electronic structure of PtPb$_{4}$ using laser angle-resolved photoemission spectroscopy(ARPES) and density functional theory(DFT) calculations. This material is closely related to PtSn$_{4}$, which exhibits exotic topological properties such as Dirac node arcs. Fermi surface(FS) of PtPb$_{4}$ consists of two electron pockets at the center of the Brillouin zone(BZ) and several hole pockets around the zone boundaries. Our ARPES data reveals significant Rashba splitting at the $Γ$ point in agreement with DFT calculations. The presence of Rashba splitting may render this material of potential interest for spintronic applications.

preprint2020arXiv

Manipulating of magnetism in the topological semimetal EuCd2As2

Magnetic Weyl semimetals are expected to have extraordinary physical properties such as a chiral anomaly and large anomalous Hall effects that may be useful for future, potential, spintronics applications. However, in most known host materials, multiple pairs of Weyl points prevent a clear manifestation of the intrinsic topological effects. Our recent density functional theory (DFT) calculations study suggest that EuCd$_{2}$As$_{2}$ can host Dirac fermions in an antiferromagnetically (AFM) ordered state or a single pair of Weyl fermions in a ferromagnetically (FM) ordered state. Unfortunately, previously synthesized crystals ordered antiferromagnetically with $T_{\textrm{N}}$\,$\simeq$\,9.5\,K. Here, we report the successful synthesis of single crystals of EuCd$_{2}$As$_{2}$ that order ferromagnetically (FM) or antiferromagnetically (AFM) depending on the level of band filling, thus allowing for the use of magnetism to tune the topological properties within the same host. We explored their physical properties via magnetization, electrical transport, heat capacity, and angle resolved photoemission spectroscopy (ARPES) measurements and conclude that EuCd$_{2}$As$_{2}$ is an excellent, tunable, system for exploring the interplay of magnetic ordering and topology.

preprint2020arXiv

Modeling and theoretical analysis of SDBD plasma actuators driven by Fast-Rise-Slow-Decay Pulsed-DC voltages

Surface dielectric barrier discharge (SDBD) actuators driven by the Pulsed-DC voltages are analyzed. The Pulsed-DC SDBD studied in this work is equivalent to a classical SDBD driven by a tailored Fast-Rise-Slow-Decay (FRSD) voltage waveform. The plasma channel formation and charge production process in the voltage rising stage are studied at different slopes using a classical 2D fluid model, the thrust generated in the voltage decaying stage is studied based on an analytical approach taking 2D model results as the input. A thrust pulse is generated in the trailing edge of the voltage waveform and reaches maximum when the voltage decreases by approximately the value of cathode voltage fall~($\approx$600~V). The time duration of the rising and trailing edge, the decay rate and the amplitude of applied voltage are the main factors affecting the performance of the actuator. Analytical expressions are formulated for the value and time moment of peak thrust, the upper limit of thrust is also estimated. Higher voltage rising rate leads to higher charge density in the voltage rising stage thus higher thrust. Shorter voltage trailing edge, in general, results in higher value and earlier appearance of the peak thrust. The detailed profile of the trailing edge also affects the performance. Results in this work allow us to flexibly design the FRSD waveforms for an SDBD actuator according to the requirements of active flow control in different application conditions.

preprint2020arXiv

PHOTOPiC: Calculate photo-ionization functions and model coefficients for gas discharge simulations

A program to compute photo-ionization functions and fitting parameters for an efficient photo-ionization model is presented. The code integrates the product of spectrum emission intensity, the photo-ionization yield and the absorption coefficient to calculate the photo-ionization function of each gas and the total photo-ionization function of the mixture. The coefficients of Helmholtz photo-ionization model is obtained by fitting the total photo-ionization function. A database consisting $\rm N_2$, $\rm O_2$, $\rm CO_2$ and $\rm H_2O$ molecules are included and can be modified by the users. The program provides more accurate photo-ionization functions and source terms for plasma fluid models.

preprint2019arXiv

Gapless Dirac surface states in the antiferromagnetic topological insulator MnBi2Te4

We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrinsic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain protected in MnBi2Te4 across the AFM transition (TN = 24 K). Our data also reveal the existence of a second Dirac cone closer to the Fermi level, predicted by band structure calculations. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering, we do observe splitting of the bulk band that develops below the TN . Having a moderately high ordering temperature, MnBi2Te4 provides a unique platform for studying the interplay between topology and magnetic ordering.

preprint2019arXiv

Intrinsic axion insulating behavior in antiferromagnetic MnBi$_6$Te$_{10}$

A striking feature of time reversal symmetry (TRS) protected topological insulators (TIs) is that they are characterized by a half integer quantum Hall effect on the boundary when the surface states are gapped by time reversal breaking perturbations. While time reversal symmetry (TRS) protected TIs have become increasingly under control, magnetic analogs are still largely unexplored territories with novel rich structures. In particular, topological magnetic insulators can also host a quantized axion term in the presence of lattice symmetries. Since these symmetries are naturally broken on the boundary, the surface states can develop a gap without external manipulation. In this work, we combine theoretical analysis, density functional calculations and experimental evidence to reveal intrinsic axion insulating behavior in MnBi6Te10. The quantized axion term arises from the simplest possible mechanism in the antiferromagnetic regime where it is protected by inversion symmetry and a fractional translation symmetry. The anticipated gapping of the Dirac surface state at the edge is subsequently experimentally established using Angle Resolved Spectroscopy. As a result, this system provides the magnetic analogue of the simplest TRS protected TI with a single, gapped Dirac cone at the surface.

preprint2016arXiv

Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$

Systematic measurements of temperature dependent magnetization, resistivity and angle-resolved photoemission spectroscopy (ARPES) at ambient pressure as well as resistivity under pressures up to 5.25 GPa were conducted on single crystals of CrAuTe$_4$. Magnetization data suggest that magnetic moments are aligned antiferromagnetically along the crystallographic $c$-axis below $T_\textrm{N}$ = 255 K. ARPES measurements show band reconstruction due to the magnetic ordering. Magnetoresistance data show clear anisotropy, and, at high fields, quantum oscillations. The Neel temperature decreases monotonically under pressure, decreasing to $T_\textrm{N}$ = 236 K at 5.22 GPa. The pressure dependencies of (i) $T_\textrm{N}$, (ii) the residual resistivity ratio, and (iii) the size and power-law behavior of the low temperature magnetoresistance all show anomalies near 2 GPa suggesting that there may be a phase transition (structural, magnetic, and/or electronic) induced by pressure. For pressures higher than 2 GPa a significantly different quantum oscillation frequency emerges, consistent with a pressure induced change in the electronic states.

preprint2016arXiv

Measuring Chern numbers above the Fermi level in the Type II Weyl semimetal Mo$_x$W$_{1-x}$Te$_2$

It has recently been proposed that electronic band structures in crystals give rise to a previously overlooked type of Weyl fermion, which violates Lorentz invariance and, consequently, is forbidden in particle physics. It was further predicted that Mo$_x$W$_{1-x}$Te$_2$ may realize such a Type II Weyl fermion. One crucial challenge is that the Weyl points in Mo$_x$W$_{1-x}$Te$_2$ are predicted to lie above the Fermi level. Here, by studying a simple model for a Type II Weyl cone, we clarify the importance of accessing the unoccupied band structure to demonstrate that Mo$_x$W$_{1-x}$Te$_2$ is a Weyl semimetal. Then, we use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe the unoccupied band structure of Mo$_x$W$_{1-x}$Te$_2$. For the first time, we directly access states $> 0.2$ eV above the Fermi level. By comparing our results with $\textit{ab initio}$ calculations, we conclude that we directly observe the surface state containing the topological Fermi arc. Our work opens the way to studying the unoccupied band structure as well as the time-domain relaxation dynamics of Mo$_x$W$_{1-x}$Te$_2$ and related transition metal dichalcogenides.

preprint2015arXiv

Dynamic control of defective gap mode through defect location

A 1D model is developed for defective gap mode (DGM) with two types of boundary conditions: conducting mesh and conducting sleeve. For a periodically modulated system without defect, the normalized width of spectral gaps equals to the modulation factor, which is consistent with previous studies. For a periodic system with local defects introduced by the boundary conditions, it shows that the conducting-mesh-induced DGM is always well confined by spectral gaps while the conducting-sleeve-induced DGM is not. The defect location can be a useful tool to dynamically control the frequency and spatial periodicity of DGM inside spectral gaps. This controllability can be applied to optical microcavities and waveguides in photonic crystals and the interaction between gap eigenmodes and energetic particles in fusion plasmas.

preprint2015arXiv

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

preprint2015arXiv

Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.

preprint2015arXiv

Unoccupied electronic structure and signatures of topological Fermi arcs in the Weyl semimetal candidate Mo$_x$W$_{1-x}$Te$_2$

Weyl semimetals have sparked intense research interest, but experimental work has been limited to the TaAs family of compounds. Recently, a number of theoretical works have predicted that compounds in the Mo$_x$W$_{1-x}$Te$_2$ series are Weyl semimetals. Such proposals are particularly exciting because Mo$_x$W$_{1-x}$Te$_2$ has a quasi two-dimensional crystal structure well-suited to many transport experiments, while WTe$_2$ and MoTe$_2$ have already been the subject of numerous proposals for device applications. However, with available ARPES techniques it is challenging to demonstrate a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$. According to the predictions, the Weyl points are above the Fermi level, the system approaches two critical points as a function of doping, there are many irrelevant bulk bands, the Fermi arcs are nearly degenerate with bulk bands and the bulk band gap is small. Here, we study Mo$_x$W$_{1-x}$Te$_2$ for $x = 0.07$ and 0.45 using pump-probe ARPES. The system exhibits a dramatic response to the pump laser and we successfully access states $> 0.2$eV above the Fermi level. For the first time, we observe direct, experimental signatures of Fermi arcs in Mo$_x$W$_{1-x}$Te$_2$, which agree well with theoretical calculations of the surface states. However, we caution that the interpretation of these features depends sensitively on free parameters in the surface state calculation. We comment on the prospect of conclusively demonstrating a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$.

preprint2014arXiv

Unusual microwave response and bulk conductivity of very thin fese0.3te0.7 films as a function of temperature

Results of X-band microwave surface impedance measurements of FeSe1-xTex very thin film are reported. The effective surface resistance shows appearance of peak at T less and near Tc when plotted as function of temperature. The authors suggests that the most well-reasoned explanation can be based on the idea of the changing orientation of the microwave magnetic field at a SN phase transition near the surface of a very thin film. The magnetic penetration depth exhibits a power-law behavior of delta lambda proportional to T with an exponent n = 2.4 at low temperatures, which is noticeably higher than in the published results on FeSe1-xTexsingle crystal. However the temperature dependence of the superfluid conductivity remains very different from the behavior described by the BCS theory. Experimental results are fitted very well by a two-gap model with delta1/kTc=0.43 and delta2/kTc=1.22,thus supporting s(+-)- wave symmetry. The rapid increase of the quasiparticle scattering time is obtained from the microwave impedance measurements.