BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Yuki Wakabayashi

Yuki Wakabayashi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sci

Catalog footprint

What is connected

3works
1topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2014arXiv

Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe

We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie temperature of the Ge0.895Fe0.105 film up to ~220 K while keeping a single ferromagnetic phase when the annealing temperature is lower than 500°C. In contrast, when annealed at 600°C, single-crystal GeFe nano-particles with stacking faults and twins, which have a high Curie temperature nearly up to room temperature, are formed in the film. Our results show that annealing is quite effective to improve the magnetic properties of GeFe for high-temperature-operating spin-injection devices based on Si or Ge.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping

We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (~5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge1-xFex films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge1-xFex from ~1018 cm-3 to ~1020 cm-3 (x = 1.0%) and to ~1019 cm-3 (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties

We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant, Curie temperature (TC), and Fe-atom locations. While TC strongly depends on the growth temperature, we find a universal relationship between TC and the lattice constant, which does not depend on the Fe content x. By using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, it is clarified that about 15% of the Fe atoms exist in the tetrahedral interstitial sites in the Ge0.935Fe0.065 lattice and that the substitutional Fe concentration is not correlated with TC. Considering these results, we suggest that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe.

0 citations0 reviewsNo code linkedOpen access