Researcher profile

Yuki Sakishita

Yuki Sakishita contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Deep Learning Model for Finding New Superconductors

Exploration of new superconductors still relies on the experience and intuition of experts and is largely a process of experimental trial and error. In one study, only 3% of the candidate materials showed superconductivity. Here, we report the first deep learning model for finding new superconductors. We introduced the method named "reading periodic table" which represented the periodic table in a way that allows deep learning to learn to read the periodic table and to learn the law of elements for the purpose of discovering novel superconductors that are outside the training data. It is recognized that it is difficult for deep learning to predict something outside the training data. Although we used only the chemical composition of materials as information, we obtained an $R^{2}$ value of 0.92 for predicting $T_\text{c}$ for materials in a database of superconductors. We also introduced the method named "garbage-in" to create synthetic data of non-superconductors that do not exist. Non-superconductors are not reported, but the data must be required for deep learning to distinguish between superconductors and non-superconductors. We obtained three remarkable results. The deep learning can predict superconductivity for a material with a precision of 62%, which shows the usefulness of the model; it found the recently discovered superconductor CaBi2 and another one Hf0.5Nb0.2V2Zr0.3, neither of which is in the superconductor database; and it found Fe-based high-temperature superconductors (discovered in 2008) from the training data before 2008. These results open the way for the discovery of new high-temperature superconductor families. The candidate materials list, data, and method are openly available from the link https://github.com/tomo835g/Deep-Learning-to-find-Superconductors.

preprint2020arXiv

Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO$_3$ films

In this study, we investigated the gate voltage dependence of $T_{\mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{\mathrm c}^{\mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{\mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{\mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{\mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.