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Researcher profile

Yuji Zhao

Yuji Zhao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.optics

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Published work

3 published item(s)

preprint2022arXiv

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S, dependence on the current was S ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10^-18 cm2/Hz -- 10^-16 cm2/Hz (f=10 Hz) at the current density J=1 A/cm2 at room temperature. The noise temperature dependences at different currents revealed peaks at T=375 K -- 400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonlinear nanophotonic devices in the Ultraviolet to Visible wavelength range

Although the first lasers invented operated in the visible, the first on-chip devices were optimized for near-infrared (IR) performance driven by demand in telecommunications. However, as the applications of integrated photonics has broadened, the wavelength demand has as well, and we are now returning to the visible (Vis) and pushing into the ultraviolet (UV). This shift has required innovations in device design and in materials as well as leveraging nonlinear behavior to reach these wavelengths. This review discusses the key nonlinear phenomena that can be used as well as presents several emerging material systems and devices that have reached the UV-Vis wavelength range.

0 citations0 reviewsNo code linkedOpen access