Researcher profile

Yuji Yamamoto

Yuji Yamamoto contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el nlin.AO physics.pop-ph physics.soc-ph

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preprint2020arXiv

Weak-coupling Mean-field Theory of Magnetic Properties of NiGa$_2$S$_4$

We report a mean-field theoretical study of a triangular lattice magnet NiGa$_2$S$_4$. Specifically, spiral mean-field theory is applied to a 17-band $d$-$p$ model constructed from the maximally localized Wannier functions. Our itinerant-model approach shows that the most stable spiral magnetic state has an ordering vector near ${\bf Q}=(0.15,0.15,0)$, consistent with neutron scattering experiments, when we assume the Ni-site Coulomb interaction is not so strong ($U \approx 2$ eV). To map onto a classical Heisenberg spin model, we estimate spin exchange interactions from the mean-field results, and find that the nearest-neighbor exchange is ferromagnetic and the largest (larger than the third nearest-neighbor exchange, in contrast to early studies). We also calculate the dynamical spin correlation function $S({\bf q}, ω)$, using the same model within the random-phase approximation (RPA). Calculated $S({\bf q}, ω)$ has a spectral structure quite different from that of conventional spin-wave excitations.

preprint2014arXiv

Emergence of self-similarity in football dynamics

The multiplayer dynamics of a football game is analyzed to unveil self-similarities in the time evolution of player and ball positioning. Temporal fluctuations in both the team-turf boundary and the ball location are uncovered to follow the rules of fractional Brownian motion with a Hurst exponent of H=0.7. The persistence time below which self-similarity holds is found to be several tens of seconds, implying a characteristic time scale that governs far-from-equilibrium motion on a playing field.

preprint2013arXiv

Graphene Grown on Ge(001) from Atomic Source

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.

preprint2012arXiv

Molecular beam growth of graphene on mica

We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results in the formation of single-, bi-, and multilayer graphene with size in the micrometer regime. Graphene grown directly on mica surface is of very high crystalline quality with the defect density below the threshold detectable by Raman spectroscopy. The interaction between graphene and the mica substrate is studied by comparison of the Raman spectroscopy and atomic force microscopy data with the corresponding results obtained for graphene flakes mechanically exfoliated onto biotite substrates. Experimental insights are combined with density functional theory calculations to propose a model for the initial stage of the van der Waals growth of graphene on mica surfaces. This work provides important hints on how the direct growth of high quality graphene on insulators can be realized in general without exceeding the thermal budget limitations of Si technologies.