BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Felix Herziger

Felix Herziger contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 21 - Emerging
7works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2015arXiv

Beyond double-resonant Raman scattering: UV Raman spectroscopy on graphene, graphite and carbon nanotubes

We present an analysis of deep-UV Raman measurements of graphite, graphene and carbon nanotubes. For excitation energies above the strong optical absorption peak at the $M$ point in the Brillouin zone ($\approx 4.7\,\text{eV}$), we partially suppress double-resonant scattering processes and observe the two-phonon density of states of carbon nanomaterials. The measured peaks are assigned to contributions from LO, TO, and LA phonon branches, supported by calculations of the phonon dispersion. Moreover, we gain access to the infrared-active $E_{1u}$ mode in graphite. By lowering the excitation energy and thus allowing double-resonant scattering processes, we demonstrate the rise of the \textit{2D} mode in graphite with ultra-short phonon wave vectors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Understanding double-resonant Raman scattering in chiral carbon nanotubes: Diameter and energy dependence of the $D$ mode

We present a theoretical model to describe the double-resonant scattering process in arbitrary carbon nanotubes. We use this approach to investigate the defect-induced $D$ mode in CNTs and unravel the dependence of the $D$-mode frequency on the CNT diameter and on the energy of the resonant optical transition. Our approach is based on the symmetry of the hexagonal lattice and geometric considerations, hence the method is independent of the exact model that is chosen to describe the electronic band structure or the phonon dispersion. We finally clarify the diameter dependence of this Raman mode that was controversely discussed in the past and demonstrate that, depending on the experimental conditions, in general two different dependencies can be measured. We also prove that carbon nanotubes with arbitrary chiral index can exhibit a $D$ mode in their Raman spectrum, in contrast to previous symmetry-based arguments. Furthermore, we give a direct quantification of the curvature-induced phonon frequency corrections of the $D$-mode in carbon nanotubes with respect to graphite.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Double-resonant LA phonon scattering in defective graphene and carbon nanotubes

We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal acoustic (LA) phonons with defects. We investigate its dependence on laser excitation energy, on the number of graphene layers and on the carbon nanotube diameter. We assign this Raman mode to so-called 'inner' processes with resonant phonons mainly from the $Γ-K$ high-symmetry direction. The asymmetry of the $D''$ mode is explained by additional contributions from phonons next to the $Γ-K$ line. Our results demonstrate the importance of inner contributions in the double-resonance scattering process and add a fast method to investigate acoustic phonons in graphene and carbon nanotubes by optical spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-dimensional analysis of the double-resonant 2D Raman mode in bilayer graphene

By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer graphene. We show that, in contrast to previous works, the so-called inner processes are dominant and that the 2D-mode lineshape is described by three dominant resonances around the $K$ point. We show that the splitting of the TO phonon branch in $Γ-K$ direction, as large as 12 cm$^{-1}$ in $GW$ approximation, is of great importance for a thorough description of the 2D-mode lineshape. Finally, we present a method to extract the TO phonon splitting and the splitting of the electronic bands from experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene Grown on Ge(001) from Atomic Source

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Layer number determination in graphene using out-of-plane vibrations

We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes process combining a LO and a ZO' phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments. The investigation of the out-of-plane ZO' phonon for layer number determination is expected to be transferable to other layered materials like boron nitride.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Molecular beam growth of graphene on mica

We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results in the formation of single-, bi-, and multilayer graphene with size in the micrometer regime. Graphene grown directly on mica surface is of very high crystalline quality with the defect density below the threshold detectable by Raman spectroscopy. The interaction between graphene and the mica substrate is studied by comparison of the Raman spectroscopy and atomic force microscopy data with the corresponding results obtained for graphene flakes mechanically exfoliated onto biotite substrates. Experimental insights are combined with density functional theory calculations to propose a model for the initial stage of the van der Waals growth of graphene on mica surfaces. This work provides important hints on how the direct growth of high quality graphene on insulators can be realized in general without exceeding the thermal budget limitations of Si technologies.

0 citations0 reviewsNo code linkedOpen access