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Yubo Qi

Yubo Qi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

"Double-path" ferroelectrics and the sign of the piezoelectric response

In this work, we propose a class of ferroelectrics (which we denote "double-path" ferroelectrics), characterized by two competing polarization switching paths for which the change in polarization is different and in fact of opposite sign. Depending on which path is favorable under given conditions, this leads to different identification of up- and down-polarized states. Since the sign of piezoelectric response depends on the assignment of up- or down-polarized state for a specific structure, this means that the material can exhibit different signs of the piezoelectric response under different conditions. We focus on HfO$_2$ as a key example. Our first-principles calculations show that there are two competing paths in HfO$_2$, resulting from different displacements of the atoms from the initial to the final structures, and the change in polarization along these two paths is of opposite sign. These results provide a natural explanation for the recently observed discrepancy in the signs of piezoelectric responses in HfO$_2$ between theoretical first-principles calculations and experimental observation. Further, this allows predictions of how to favor one path over another by changes in conditions and compositional tuning. This family of materials also includes other candidates, such as CuInP$_2$S$_6$ and theoretically proposed LaVO$_3$-SrVO$_3$ superlattice. We finally note that double-path ferroelectrics possess novel electromechanical properties since the signs of their piezoelectric responses can be switched.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Vibrational fingerprints of ferroelectric hafnia

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO2 crystals stabilized with yttrium (chemical formula HfO2:xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO2 and paves the way for an analysis of mode contributions to high-k dielectric and ferroelectric properties for chip technologies.

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preprint2020arXiv

Phase Competition in HfO$_2$ with Applied Electric Field from First Principles

In this work, the results of first-principles density-functional-theory calculations are used to construct the energy landscapes of HfO$_2$ and its Y and Zr substituted derivatives as a function of symmetry-adapted lattice-mode amplitudes. These complex energy landscapes possess multiple local minima, corresponding to the tetragonal, oIII ($Pca2_1$), and oIV ($Pmn2_1$) phases. We find that the energy barrier between the non-polar tetragonal phase and the ferroelectric oIII phase can be lowered by Y and Zr substitution. In Hf$_{0.5}$Zr$_{0.5}$O$_2$ with an ordered cation arrangement, Zr substitution makes the oIV phase unstable, and it become an intermediate state in the tetragonal to oIII phase transition. Using these energy landscapes, we interpret the structural transformations and hysteresis loops computed for electric-field cycles with various choices of field direction. The implications of these results for interpreting experimental observations, such as the wake-up and split-up effects, are also discussed. These results and analysis deepen our understanding of the origin of ferroelectricity and field cycling behaviors in HfO$_2$-based films, and allow us to propose strategies for improving their functional properties.

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preprint2020arXiv

Stabilization of competing ferroelectric phases of HfO$_2$ under epitaxial strain

Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric $Pnm2_1$ phase of HfO$_2$. It is proposed that this ferroelectric $Pnm2_1$ phase can account for the recently observed ferroelectricity in the (111)-oriented HfO$_2$-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO$_2$ could potentially improve the performances of HfO$_2$-based films in logic and memory devices.

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preprint2016arXiv

Atomistic Description for Temperature-Driven Phase Transitions in BaTiO$_3$

Barium titanate (BaTiO$_3$) is a prototypical ferroelectric perovskite that undergoes the rhombohedral-orthorhombic-tetragonal-cubic phase transitions as the temperature increases. In this work, we develop a classical interatomic potential for BaTiO$_3$ within the framework of the bond-valence theory. The force field is parameterized from first-principles results, enabling accurate large-scale molecular dynamics (MD) simulations at finite temperatures. Our model potential for BaTiO$_3$ reproduces the temperature-driven phase transitions in isobaric-isothermal ensemble (NPT) MD simulations. This potential allows the analysis of BaTiO$_3$ structures with atomic resolution. By analyzing the local displacements of Ti atoms, we demonstrate that the phase transitions of BaTiO$_3$ exhibit a mix of order-disorder and displacive characters. Besides, from detailed observation of structural dynamics during phase transition, we discover that the global phase transition is associated with changes in the equilibrium value and fluctuations of each polarization component, including the ones already averaging to zero, Contrary to the conventional understanding that temperature increase generally causes bond-softening transition, the x polarization component exhibits a bond-hardening character during the orthorhombic to tetragonal transition. These results provide further insights about the temperature-driven phase transitions in BaTiO$_3$.

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preprint2015arXiv

Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization rotations and the electrostatic properties of the doped silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability of polarization in each direction. Based on this model, we demonstrate that MOSFET operation could be achieved by polarization reorientation with a low operating voltage, if the thickness of ferroelectric oxide is properly selected. Polarization reorientation can boost the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60 mV/decade. We believe that this model could provide guidance in designing electronic logic devices with low operating voltages and low active energy consumption.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theoretical Modeling of Tribochemical Reaction on Pt and Au Contacts: Mechanical Load and Catalysis

Micro-electro-mechanical system and nano-electro-mechanical system (MEMS and NEMS) transistors are considered promising for size-reducing and power-maximizing electronic devices. However, the tribopolymer which forms due to the mechanical load to the surface contacts affects the conductivity between the contacts dramatically. This is one of the challenging problems that prevent widespread practical use of these otherwise promising devices. Here, we use density functional theory (DFT) to investigate the mechanisms of tribopolymer formation, including normal mechanical loading, the catalytic effect, as well as the electrochemical effect of the metal contacts. We select benzene select as the background gas, because it is one of the most common and severe hydrocarbon contaminants. Two adsorption cases are considered: one is benzene on the reactive metal surface, Pt(111), and the other is benzene on the noble metal, Au(111). We demonstrate that the formation of tribopolymer is induced both by the mechanical load and by the catalytic effect of the contact. First, benzene molecules are adsorbed on the Pt surfaces. Then, due to the closure of the Pt contacts, stress is applied to the adsorbates, making the C-H bonds more fragile. As the stress increases further, H atoms are pressed close to the Pt substrate and begin to bond with Pt atoms. Thus Pt acts as a catalyst, accelerating the dehydrogenation process. When there is voltage applied across the contacts, the catalytic effect is enhanced by electrochemistry. Finally, due to the loss of H atoms, C atoms become more reactive and link together or pile up to form tribopolymer. By understanding these mechanisms, we provide guidance on design strategies for suppressing tribopolymer formation.

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