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Researcher profile

Xianghan Xu

Xianghan Xu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

Angularly quantized spin rotations in hexagonal LuMnO3

Optical control of the spin degree of freedom is often desired in application of the spin technology. Here we report spin-rotational excitations observed through inelastic light scattering of the hexagonal LuMnO3 in the antiferromagnetically (AFM) ordered state. We propose a model based on the spin-spin interaction Hamiltonian associated with the spin rotation of the Mn ions, and find that the spin rotations are angularly quantized by 60, 120, and 180 degrees. Angular quantization is considered to be a consequence of the symmetry of the triangular lattice of the Mn-ion plane in the hexagonal LuMnO3. These angularly-quantized spin excitations may be pictured as isolated flat bubbles in the sea of the ground state, which may lead to high-density information storage if applied to spin devices. Optically pumped and detected spin-excitation bubbles would bring about the advanced technology of optical control of the spin degree of freedom in multiferroic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Band-Mott mixing hybridizes the gap in Fe$_2$Mo$_3$O$_8$

We combined optical spectroscopy and first principles electronic structure calculations to reveal the charge gap in the polar magnet Fe$_2$Mo$_3$O$_8$. Iron occupation on the octahedral site draws the gap strongly downward compared to the Zn parent compound, and subsequent occupation of the tetrahedral site creates a narrow resonance near the Fermi energy that draws the gap downward even further. This resonance is a many-body effect that emanates from a flat valence band in a Mott-like state due to screening of the local moment - similar to expectations for a Zhang-Rice singlet, except that here, it appears in a semi-conductor. We discuss the unusual hybridization in terms of orbital occupation and character as well as the structure-property relationships that can be unveiled in various metal-substituted systems (Ni, Mn, Co, Zn).

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Simultaneous imaging of dopants and free charge carriers by STEM-EELS

Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high-enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing both high- and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a novel plasmon mode that is highly confined between high- and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage from EELS data and transport measurements on the bulk single crystals of BLSO. These results represent a unique way of studying heterogeneities in solids, understanding structure-property relationships at the nanoscale, and opening the way to leveraging nanoscale doping texture in the design of nanophotonic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Vibrational fingerprints of ferroelectric hafnia

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO2 crystals stabilized with yttrium (chemical formula HfO2:xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO2 and paves the way for an analysis of mode contributions to high-k dielectric and ferroelectric properties for chip technologies.

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preprint2021arXiv

Low-loss tunable infrared plasmons in the high-mobility perovskite (Ba,La)SnO$_3$

BaSnO$_3$ exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations, plasmons, are expected to arise in this material, thus providing a tool to control the nanoscale optical field for optoelectronics applications. Here, we demonstrate the existence of relatively long-lived plasmons supported by high-mobility charge carriers in La-doped BaSnO$_3$ (BLSO). By exploiting the high spatial and energy resolution of electron energy-loss spectroscopy with a focused beam in a scanning transmission electron microscope, we systematically investigate the dispersion, confinement ratio, and damping of infrared localized surface plasmons (LSP) in BLSO nanoparticles. We find that the LSPs in BLSO are highly spatially confined compared to those sustained by noble metals and have relatively low loss and high quality factor compared to other doped oxides. Further analysis clarifies the relation between plasmon damping and carrier mobility in BLSO. Our results support the use of nanostructured degenerate semiconductors for plasmonic applications in the infrared region and establish a relevant alternative to more traditional plasmonic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Highly tunable ferroelectricity in hybrid improper ferroelectric Sr3Sn2O7

The successful theoretical prediction and experimental demonstration of hybrid improper ferroelectricity (HIF) provides a new pathway to couple octahedral rotations, ferroelectricity, and magnetism in complex materials. To enable technological applications, a HIF with a small coercive field is desirable. We successfully grow Sr3Sn2O7 single crystals, and discover that they exhibit the smallest electric coercive field at room temperature among all known HIFs. Furthermore, we demonstate that a small external stress can repeatedly erase and re-generate ferroelastic domains. In addition, using in-plane piezo-response force microscopy, we characterize abundant charged and neutral domain walls. The observed small electrical and mechanical coercive field values are in accordance with the results of our first-principles calculations on Sr3Sn2O7, which show low energy barriers for both 90° and 180° polarization switching compared to those in other experimentally demonstrated HIFs. Our findings represent an advance towards the possible technological implemetation of functional HIFs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stabilization of competing ferroelectric phases of HfO$_2$ under epitaxial strain

Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric $Pnm2_1$ phase of HfO$_2$. It is proposed that this ferroelectric $Pnm2_1$ phase can account for the recently observed ferroelectricity in the (111)-oriented HfO$_2$-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO$_2$ could potentially improve the performances of HfO$_2$-based films in logic and memory devices.

0 citations0 reviewsNo code linkedOpen access