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Yuan Yan

Yuan Yan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

5 published item(s)

preprint2021arXiv

Vector Autoregressive Models with Spatially Structured Coefficients for Time Series on a Spatial Grid

We propose a parsimonious spatiotemporal model for time series data on a spatial grid. Our model is capable of dealing with high-dimensional time series data that may be collected at hundreds of locations and capturing the spatial non-stationarity. In essence, our model is a vector autoregressive model that utilizes the spatial structure to achieve parsimony of autoregressive matrices at two levels. The first level ensures the sparsity of the autoregressive matrices using a lagged-neighborhood scheme. The second level performs a spatial clustering of the non-zero autoregressive coefficients such that nearby locations share similar coefficients. This model is interpretable and can be used to identify geographical subregions, within each of which, the time series share similar dynamical behavior with homogeneous autoregressive coefficients. The model parameters are obtained using the penalized maximum likelihood with an adaptive fused Lasso penalty. The estimation procedure is easy to implement and can be tailored to the need of a modeler. We illustrate the performance of the proposed estimation algorithm in a simulation study. We apply our model to a wind speed time series dataset generated from a climate model over Saudi Arabia to illustrate its usefulness. Limitations and possible extensions of our method are also discussed.

preprint2020arXiv

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests in the past few years for high-performance electronic and optoelectronic devices. It also holds promises to significantly improve the performance and enable new functions of spintronic devices. It is imperative to have a 2D material possessing diverse electronic and magnetic properties that are required in spintronics. In this work, using density functional theory calculations, we surveyed all IV, V and VI group transition metal dichalcogenides (TMDs) and discovered that CrS2 has the most diverse electronic and magnetic properties: antiferromagnetic (AFM) metallic 1T phase, nonmagnetic (NM) semiconductor 2H phase, and ferromagnetic (FM) semiconductor 1T_prime phase with a Curie temperature of ~1000 K. More interestingly, we found that a tensile or compressive strain could turn 1T_prime phase into a spin-up or spin-down half metal. Such a unique feature enables designing strain-controlled spintronic devices using a single piece of CrS2 crystal with improved energy efficiency, which remains a challenge in miniaturization of spintronic devices. In-depth analysis attributed the unique strain tunability to the interplay between strain-induced lattice deformation and different spatial orientation of the spin-up/spin-down electronic orbitals. A prototypical design of a simple spin-valve logic device operated by strain is also presented.

preprint2018arXiv

Non-Gaussian Autoregressive Processes with Tukey g-and-h Transformations

When performing a time series analysis of continuous data, for example from climate or environmental problems, the assumption that the process is Gaussian is often violated. Therefore, we introduce two non-Gaussian autoregressive time series models that are able to fit skewed and heavy-tailed time series data. Our two models are based on the Tukey g-and-h transformation. We discuss parameter estimation, order selection, and forecasting procedures for our models and examine their performances in a simulation study. We demonstrate the usefulness of our models by applying them to two sets of wind speed data.

preprint2016arXiv

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably enlarge the family of van der Waals heterostructures. Despite well understanding of the two individual materials, the electron transport properties of a combined vertical heterojunction are still unknown. Here we show the experimental realization of a vertical heterojunction between Bi2Se3 nanoplate and monolayer graphene. At low temperatures, the electron transport through the vertical heterojunction is dominated by the tunneling process, which can be effectively tuned by gate voltage to alter the density of states near the Fermi surface. In the presence of a magnetic field, quantum oscillations are observed due to the quantized Landau levels in both graphene and the two-dimensional surface states of Bi2Se3. Furthermore, we observe an exotic gate-tunable tunneling resistance under high magnetic field, which displays resistance maxima when the underlying graphene becomes a quantum Hall insulator.

preprint2014arXiv

Binary Log-Linear Learning with Stochastic Communication Links

In this paper, we consider distributed decision-making over stochastic communication links in multi-agent systems. We show how to extend the current literature on potential games with binary log-linear learning (which mainly focuses on ideal communication links) to consider the impact of stochastic communication channels. More specifically, we derive conditions on the probability of link connectivity to achieve a target probability for the set of potential maximizers (in the stationary distribution). Furthermore, our toy example demonstrates a transition phenomenon for achieving any target probability for the set of potential maximizers.