BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Han-Chun Wu

Han-Chun Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

Catalog footprint

What is connected

5works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2016arXiv

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably enlarge the family of van der Waals heterostructures. Despite well understanding of the two individual materials, the electron transport properties of a combined vertical heterojunction are still unknown. Here we show the experimental realization of a vertical heterojunction between Bi2Se3 nanoplate and monolayer graphene. At low temperatures, the electron transport through the vertical heterojunction is dominated by the tunneling process, which can be effectively tuned by gate voltage to alter the density of states near the Fermi surface. In the presence of a magnetic field, quantum oscillations are observed due to the quantized Landau levels in both graphene and the two-dimensional surface states of Bi2Se3. Furthermore, we observe an exotic gate-tunable tunneling resistance under high magnetic field, which displays resistance maxima when the underlying graphene becomes a quantum Hall insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic collective group delay and its Goos-Hänchen component in graphene

We theoretically investigate the experimental observable of the ballistic collective group delay (CGD) of all the particles on the Fermi surface in graphene. First, we reveal that, lateral Goos-Hänchen (GH) shifts along barrier interfaces contribute an inherent component in the individual group delay (IGD). Then, by linking the complete IGD to spin precession through a dwell time, we suggest that, the CGD and its GH component can be electrostatically measured by a conductance difference in a spin-precession experiment under weak magnetic fields. Such an approach is feasible for almost arbitrary Fermi energy. We also indicate that, it is a generally nonzero self-interference delay that relates the IGD and dwell time in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that, the NDR feature only presents with appropriate structural parameters for the massless case and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Giant Goos-Hänchen Shift in Graphene Double-barrier Structures

We report giant Goos-Hänchen shifts [Goos and Hänchen, Ann. Phys. 436, 333 (1947)] for electron beams tunneling through graphene double barrier structures. We find that inside the transmission gap for the single barrier, the shift displays sharp peaks with magnitudes up to the order of electron beam width and rather small full-widths-at-half-maximum, which may be utilized to design valley and spin beam splitters with wide tunability and high energy resolution. We attribute the giant shifts to quasibound states in the structures. Moreover, an induced energy gap in the dispersion can increase the tunability and resolution of the splitters.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Two-dimensional group delay in graphene probed by spin precession measurements

We take graphene as an example to demonstrate that the present widely adopted expression is only the scattering component of a true 2D group delay in the condensed matter context, in which the spatial Goos-Hänchen (GH) shift along an interface contributes an intrinsic component. We relate the dwell time to spin precession and derive a relation between the 2D group delay and dwell time, whereby we for the first time reveal that, the group delay for 2D ballistic electronic systems can be directly observed by measuring a conductance difference in a weak-field spin precession experiment. This physical observable not only implies the group delay being a relevant quantity even in the condensed matter context, but also provides an experimental evidence for the intrinsic effect of the GH shift. Finally, we revisit the 2D Hartman effect, a central issue of the group delay, by analytically solving it via the vested relation and calculating the proposed observable at the Dirac point.

0 citations0 reviewsNo code linkedOpen access