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Yu-gui Yao

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2018arXiv

Geometric Effect on Quantum Anomalous Hall States in Magnetic Topological Insulators

An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We numerically investigate this dissipative behavior of QAHE in MTIs with a three-dimensional tight-binding model and non-equilibrium Greens function formalism. It is found that, in clean samples, the geometric mismatch between the detecting electrodes and the MTI sample leads to additional scattering in the central Hall bar, which is similar to the effect of splitting gates in the traditional Hall effect. As a result, while the Hall resistance remains quantized, the longitudinal resistance deviates from zero due to such additional scattering. It is also shown that external magnetic fields as well as disorder scattering can suppress the dissipation of the longitudinal resistance. These results are in good agreement with previous experimental observations and provide insight on the fabrication of QAHE devices.

preprint2015arXiv

Electronic, Dielectric, and Plasmonic Properties of Two-Dimensional Electride Materials X$_2$N (X=Ca, Sr): A First-Principles Study

Based on first-principles calculations, we systematically study the electronic, dielectric, and plasmonic properties of two-dimensional (2D) electride materials X$_2$N (X=Ca, Sr). We show that both Ca$_2$N and Sr$_2$N are stable down to monolayer thickness. For thicknesses larger than 1-monolayer (1-ML), there are 2D anionic electron layers confined in the regions between the [X$_2$N]$^+$ layers. These electron layers are strongly trapped and have weak coupling between each other. As a result, for the thickness dependence of many properties such as the surface energy, work function, and dielectric function, the most dramatic change occurs when going from 1-ML to 2-ML. For both bulk and few-layer Ca$_2$N and Sr$_2$N, the in-plane and out-of-plane real components of their dielectric functions have different signs in an extended frequency range covering the near infrared, indicating their potential applications as indefinite media. We find that bulk Ca$_2$N and Sr$_2$N could support surface plasmon modes in the near infrared range. Moreover, tightly-bounded plasmon modes could exist in their few-layer structures. These modes have significantly shorter wavelengths (~few tens of nanometers) compared with that of conventional noble metal materials, suggesting their great potential for plasmonic devices with much smaller dimensions.

preprint2011arXiv

Band Structure Engineering of Multinary Chalcogenide Topological Insulators

Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the non-trivial band gaps of these existing binary and ternary TIs are limited to small values, usually around 10 meV or less. In this work, we reveal that a large non-trivial band gap requires the material having a large negative crystal field splitting $Δ_{CF}$ at top of the valence band and a moderately large negative $s-p$ band gap $E_g^{s-p}$. These parameters can be better tuned through chemical ordering in multinary compounds. Based on this understanding, we show that a series of quaternary I2-II-IV-VI4 compounds, including Cu2HgPbSe4, Cu2CdPbSe4, Ag2HgPbSe4 and Ag2CdPbTe4 are TIs, in which Ag2HgPbSe4 has the largest TI band gap of 47 meV because it combines the optimal values of $Δ_{CF}$ and $E_g^{s-p}$.

preprint2005arXiv

Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure

We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.