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Chun-Gang Duan

Chun-Gang Duan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-concond-mat.otherphysics.comp-ph

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Published work

24 published item(s)

preprint2021arXiv

Exotic dielectric behaviors induced by pseudo-spin texture in magnetic twisted bilayer

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate moire pattern and uncommon electronic behaviors may appear due to the absence of phase coherence. Such system is extremely sensitive to further twist and many intriguing phenomena will occur. In this work, based on first-principles calculations we show that, for further twist near 30 degree, there could induce dramatically different dielectric behaviors of electron between left and right twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist, which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e. the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moire systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Concept of the half-valley-metal and quantum anomalous valley Hall effect

Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed matter physics, i.e. valleytronics, whose development is exactly following that of spintronics which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics with one spin channel is conducting whereas the other is insulating, we propose the concept of half-valley-metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin-polarized even when spin-orbit interactions are considered. Combining first-principles calculations with two-band kp model, the physical mechanism to form the half-valley-metal is illuminated. Taking the ferrovalley H-FeCl2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect half-valley-metal state. In addition, we find that in the so obtained half-valley-metal state, the conduction valley demonstrates Dirac cone-like linear energy dispersion. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys follow same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess non-zero Chern number and consequently intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Concepts of Ferrovalley Material and Anomalous Valley Hall Effect

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization in electronics, as well as ferromagnetic materials with spontaneous spin polarization in spintronics, here we introduce a new member of ferroic-family, i.e. a ferrovalley material with spontaneous valley polarization. Combining a two-band kp model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal-d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and more interestingly, anomalous valley Hall effect. On account of the latter, a series of functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory, valley filter, are contemplated for valleytronic applications.

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preprint2016arXiv

Dynamic Modulation of the Transport Properties of the LaAlO3/SrTiO3 Interface Using Uniaxial Strain

Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO) heterostructure, mechanical strain has been proven to be an effective approach by growing the LAO/STO films on different substrates with varying lattice mismatches to STO. However, this lattice-mismatch-induced strain effect is static and biaxial, hindering the study of the strain effect in a dynamic way. In this work we realize dynamic and uniaxial strain to the LAO/STO oxide heterostructure at low temperature, through mechanical coupling from a magnetostrictive template. This anisotropic strain results in symmetry breaking at the interface and induces further splitting of the electronic band structure and therefore produces different conductivities along the x and y in-plane directions. In particular, we observe that along the strained direction the interface conductivity decreases by up to 70% under a tensile strain, while it increases by 6.8% under a compressive strain at 2 K. Also, it is revealed that the modulation on the interfacial transport property can be anisotropic, i.e., the resistance changes differently when an excitation current is parallel or perpendicular to the strain direction. This approach of strain engineering provides another degree of freedom for control of transport properties of oxide heterostructures and opens an additional way to investigate strain effects in materials science.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Engineering the magnetic anisotropy of atomic-scale nanostructure under electric field

Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful identifying different contributions of each atomic orbital to the magnetic anisotropy energy (MAE) of the ferromagnetic metal films, we argue that it is possible to engineer both the MAE and the magnetic response to the electric field of atomic-scale magnetic nanostructures. Taking the iron monolayer as a matrix, we propose several interesting iron nanostructures with dramatically different magnetic properties. Such nanostructures could exhibit strong magnetoelectric effect. Our work may open a new avenue to the artificial design of electrically controlled magnetic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First-principles studies of multiferroic and magnetoelectric materials

Multiferroics are materials where two or more ferroic orders coexist owing to the interplay between spin, charge, lattice and orbital degrees of freedom. The explosive expansion of multiferroics literature in recent years demon-strates the fast growing interest in this field. In these studies, the first-principles calculation has played a pioneer role in the experiment explanation, mechanism discovery and prediction of novel multiferroics or magnetoelectric materials. In this review, we discuss, by no means comprehensively, the extensive applications and successful achievements of first-principles approach in the study of multiferroicity, magnetoelectric effect and tunnel junc-tions. In particular, we introduce some our recently developed methods, e.g., the orbital selective external potential (OSEP) method, which prove to be powerful tools in the finding of mechanisms responsible for the intriguing phe-nomena occurred in multiferroics or magnetoelectric materials. We also summarize first-principles studies on three types of electric control of magnetism, which is the common goal of both spintronics and multiferroics. Our review offers in depth understanding on the origin of ferroelectricity in transition metal oxides, and the coexistence of fer-roelectricity and ordered magnetism, and might be helpful to explore novel multiferroic or magnetoelectric materi-als in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic Ordering Induced Giant Optical Property Change in Tetragonal BiFeO3

Magnetic ordering, as one of the most important characteristics in magnetic materials, could have significant influence on the band structure, spin dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the compressive strained tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with the minimal one-band tight-binding models, we find that when BFO changes from C1-type antiferromagnetic (AFM) phase to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by the two-center Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on energy band dispersion dramatically changes the optical properties of tetragonal BFO. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-type AFM case. Finally, we propose a practical way to distin-guish the C1- and G-type AFM of BFO using the optical method, which might be of great importance in next-generation information storage technologies and widens the potential application of BFO to optical switch.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nodeless superconductivity in the presence of spin-density wave in pnictide superconductors: The case of BaFe$_{2-x}$Ni$_{x}$As$_{2}$

The characteristics of Fe-based superconductors are manifested in their electronic, magnetic properties, and pairing symmetry of the Cooper pair, but the latter remain to be explored. Usually in these materials, superconductivity coexists and competes with magnetic order, giving unconventional pairing mechanisms. We report on the results of the bulk magnetization measurements in the superconducting state and the low-temperature specific heat down to 0.4 K for BaFe$_{2-x}$Ni$_{x}$As$_{2}$ single crystals. The {electronic} specific heat displays a pronounced anomaly at the superconducting transition temperature and a small residual part {at low temperatures in the superconducting state}. The normal-state Sommerfeld coefficient increases with Ni doping for $x$ = 0.092, 0.096, and 0.10, which illustrates the competition between magnetism and superconductivity. Our analysis of the temperature dependence of the superconducting-state specific heat and the London penetration depth provides strong evidence for a two-band $s$-wave order parameter. Further, the data of the London penetration depth calculated from the lower critical field follow an exponential temperature dependence, characteristic of a fully gapped superconductor. These observations clearly show that the superconducting gap in the nearly optimally doped compounds is nodeless.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Superconducting properties of sulfur-doped iron selenide

The recent discovery of high-temperature superconductivity in single-layer iron selenide has generated significant experimental interest for optimizing the superconducting properties of iron-based superconductors through the lattice modification. For simulating the similar effect by changing the chemical composition due to S doping, we investigate the superconducting properties of high-quality single crystals of FeSe$_{1-x}$S$_{x}$ ($x$=0, 0.04, 0.09, and 0.11) using magnetization, resistivity, the London penetration depth, and low temperature specific heat measurements. We show that the introduction of S to FeSe enhances the superconducting transition temperature $T_{c}$, anisotropy, upper critical field $H_{c2}$, and critical current density $J_{c}$. The upper critical field $H_{c2}(T)$ and its anisotropy are strongly temperature dependent, indicating a multiband superconductivity in this system. Through the measurements and analysis of the London penetration depth $λ_{ab}(T)$ and specific heat, we show clear evidence for strong coupling two-gap $s$-wave superconductivity. The temperature-dependence of $λ_{ab}(T)$ calculated from the lower critical field and electronic specific heat can be well described by using a two-band model with $s$-wave-like gaps. We find that a $d$-wave and single-gap BCS theory under the weak-coupling approach can not describe our experiments. The change of specific heat induced by the magnetic field can be understood only in terms of multiband superconductivity.

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preprint2014arXiv

Dirac and Weyl Semimetal in XYBi (X=Ba, Eu; Y=Cu, Ag and Au)

Weyl and Dirac semimetals recently stimulate intense research activities due to their novel properties. Combining first-principles calculations and effective model analysis, we predict that nonmagnetic compounds BaYBi (Y=Au, Ag and Cu) are Dirac semimetals. As for the magnetic compound EuYBi, although the time reversal symmetry is broken, their long-range magnetic ordering cannot split the Dirac point into pairs of Weyl points. However, we propose that partially substitute Eu ions by Ba ions will realize the Weyl semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron-Phonon Superconductivity in LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$

We report density functional calculations of the electronic structure, Fermi surface, phonon spectrum and electron--phonon coupling for newly discovered superconductor LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$. Significant similarity between LaO$_{0.5}$F$_{0.5}$BiS$_{2}$ and LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ is found, i.e. there is a strong Fermi surface nesting at ($π$,$π$,0), which results in unstable phonon branches. Combining the frozen phonon total energy calculations and an anharmonic oscillator model, we find that the quantum fluctuation prevents the appearance of static long--range order. The calculation shows that LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ is highly anisotropic, and same as LaO$_{0.5}$F$_{0.5}$BiS$_{2}$, this compound is also a conventional electron-phonon coupling induced superconductor.

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preprint2014arXiv

Metallic ferroelectricity induced by anisotropic unscreened coulomb interaction in LiOsO3

As the first well-documented example of the ferroelectric metal, LiOsO3 has received extensive research attention recently. Using density-functional calculations, we perform a systematic study for LiOsO3. We address the controversy about the depth of the double well in the potential surface, and propose that the ferroelectric transition is order-disorder like. Moreover, we unambiguously demonstrate that the electric screening in this compound is highly anisotropic, and there is still unscreened dipole-dipole interaction in one special direction which results in the long range ferroelectric order despite the metallic nature of LiOsO3.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-dependent optical response of multiferroic EuO

Using first-principles density functional calculations, electronic and optical properties of ferromagnetic semiconductor EuO are investigated. In particular, we have developed a way to obtain the spin-dependent optical response of the magnetic materials, which is helpful to verify the spin-dependent band structure of EuO. Significantly different optical responses from spin-up and spin-down channels are obtained in both linear and nonlinear cases, making it possible to distinguish contributions from different spin-channels in the optical absorption spectra if spin-flip process can be neglected. In addition, the red-shift of the absorption edge from paramagnetic to ferromagnetic ordering is explained by exchange interactions. Using such method, we have also compared the optical properties of multiferroic EuO which is induced by strong epitaxial strain. Our results show that from tensile to compressive strain, the blue-shift of the leading absorption peaks in the optical spectra, the red-shift of the optical band gap in spin-up state can be observed, consistent to the energy difference between spin-splitting orbits. The spin-dependent nonlinear optical properties reveal that in the infrared and visible light region, the contributions to second-harmonic generation (SHG) susceptibilities are mainly from spin-majority channels. In addition, the strain effect is also discussed. With the increase of epitaxial strain, the larger energy shift of the leading absorption peaks, and the more remarkable nonlinear optical response can be obtained.

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preprint2014arXiv

Tunable Magnetic Semiconductor Behavior Driven by Half-Filled One Dimensional Band in Zigzag Phosphorene Nanoribbons

An antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from a comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them great potential for the applications in nanoelectronic devices.

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preprint2013arXiv

Microscopic Mechanism of Stereochemically Active Lone Pair Studied from Orbital Selective External Potential Calculation

The nature of the stereochemically active lone pair has long been in debate. Here, by application of our recently developed orbital selective external potential (OSEP) method, we have studied the microscopic mechanism of stereochemically active lone pairs in various compounds. The OSEP method allows us to shift the energy level of specific atomic orbital, therefore is helpful to identify unambiguously the role of this orbital to the chemical and physical properties of the system we are interested in. Our numerical results, with compelling proofs, demonstrate that the on-site mixing of cation valence s orbital with the nominally empty p orbitals of the same subshell is crucial to the formation of lone pair, whereas the anion p orbital has only small effect. Our detailed investigation of Sn and Pb monochalcogenides show that structures of these systems have significant effects on lone pairs. In return, the formation of lone pair, which can be controlled by our OSEP method, could result in structural instabilities of Sn and Pb monochalcogenides.

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preprint2012arXiv

Density-functional calculations of the electronic structure and lattice dynamics of superconducting LaO$_{0.5}$F$_{0.5}$BiS$_{2}$: Evidence for an electron-phonon interaction near the charge-density-wave instability

We discuss the electronic structure, lattice dynamics and electron-phonon interaction of newly discovered superconductor LaO$_{0.5}$F$_{0.5}$BiS$_{2}$ using density functional based calculations. A strong Fermi surface nesting at $\mathbf{k}$=($π$,$π$,0) suggests a proximity to charge density wave instability and leads to imaginary harmonic phonons at this $\mathbf{k}$ point associated with in-plane displacements of S atoms. Total energy analysis resolves only a shallow double-well potential well preventing the appearance of static long-range order. Both harmonic and anharmonic contributions to electron-phonon coupling are evaluated and give a total coupling constant $λ\simeq 0.85$ prompting this material to be a conventional superconductor contrary to structurally similar FeAs materials.

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preprint2012arXiv

Epitaxial strain induced magnetic transitions and phonon instabilities of the tetragonal SrRuO3

Using density-functional theory calculations, we investigate the magnetic as well as the dynamical properties of tetragonal SrRuO3 (SRO) under the influence of epitaxial strain. It is found that both the tensile and compressive strain in the xy-plane could induce the abrupt change in the magnetic moment of Ru atom. In particular, under the in-plane ~4% compressive strain, a ferromagnetic to nonmagnetic transition is induced. Whereas for the tensile strain larger than 3%, the Ru magnetic moment drops gradually with the increase of the strain, exhibiting a weak ferromagnetic state. We find that such magnetic transitions could be qualitatively explained by the Stoner model. In addition, frozen phonon calculations at Γ point reveal structural instabilities could occur under both compressive and tensile strains. Such instabilities are very similar to those of the ferroelectric perovskite oxides, even though SRO remains to be metallic in the range we studied. These might have influence on the physical properties of oxide supercells taking SRO as constituent.

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preprint2012arXiv

Ferroelectricity induced by interatomic magnetic exchange interaction

Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science[1-9]. However, the coexistence of magnetism and conventional ferroelectricity is physically unfavoured[10]. Recently several remedies have been proposed, e.g., improper ferroelectricity induced by specific magnetic[6] or charge orders[2]. Guiding by these theories, currently most research is focused on frustrated magnets, which usually have complicated magnetic structure and low magnetic ordering temperature, consequently far from the practical application. Simple collinear magnets, which can have high magnetic transition temperature, have never been considered seriously as the candidates for multiferroics. Here, we argue that actually simple interatomic magnetic exchange interaction already contains a driving force for ferroelectricity, thus providing a new microscopic mechanism for the coexistence and strong coupling between ferroelectricity and magnetism. We demonstrate this mechanism by showing that even the simplest antiferromagnetic (AFM) insulator MnO, can display a magnetically induced ferroelectricity under a biaxial strain.

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preprint2011arXiv

Band Structure Engineering of Multinary Chalcogenide Topological Insulators

Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the non-trivial band gaps of these existing binary and ternary TIs are limited to small values, usually around 10 meV or less. In this work, we reveal that a large non-trivial band gap requires the material having a large negative crystal field splitting $Δ_{CF}$ at top of the valence band and a moderately large negative $s-p$ band gap $E_g^{s-p}$. These parameters can be better tuned through chemical ordering in multinary compounds. Based on this understanding, we show that a series of quaternary I2-II-IV-VI4 compounds, including Cu2HgPbSe4, Cu2CdPbSe4, Ag2HgPbSe4 and Ag2CdPbTe4 are TIs, in which Ag2HgPbSe4 has the largest TI band gap of 47 meV because it combines the optimal values of $Δ_{CF}$ and $E_g^{s-p}$.

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preprint2011arXiv

Electric-field control of magnetic ordering in the tetragonal BiFeO3

We propose a way to use electric-field to control the magnetic ordering of the tetragonal BiFeO3. Based on systematic first-principles studies of the epitaxial strain effect on the ferroelectric and magnetic properties of the tetragonal BiFeO3, we find that there exists a transition from C-type to G-type antiferromagnetic (AFM) phase at in-plane constant a ~ 3.905 Å when the ferroelectric polarization is along [001] direction. Such magnetic phase transition can be explained by the competition between the Heisenberg exchange constant J1c and J2c under the influence of biaxial strain. Interestingly, when the in-plane lattice constant enlarges, the preferred ferroelectric polarization tends to be canted and eventually lies in the plane (along [110] direction). It is found that the orientation change of ferroelectric polarization, which can be realized by applying external electric-field, has significant impact on the Heisenberg exchange parameters and therefore the magnetic orderings of tetragonal BiFeO3. For example, at a ~ 3.79 Å, an electric field along [111] direction with magnitude of 2 MV/cm could change the magnetic ordering from C-AFM to G-AFM. As the magnetic ordering affects many physical properties of the magnetic material, e.g. magnetoresistance, we expect such strategy would provide a new avenue to the application of multiferroic materials.

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preprint2010arXiv

Electric Field Effect on Magnetization and Magnetocrystalline Anisotropy at the Fe/MgO(001) Interface

Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielectric constant. In particular, we predict an enhancement of the interface magnetoelectric susceptibility by a factor of the dielectric constant of MgO over that of the free standing Fe (001) surface. We also predict a significant effect of electric field on the interface magnetocrystalline anisotropy due to the change in the relative occupancy of the 3d-orbitals of Fe atoms at the Fe/MgO interface. These results may be interesting for technological applications such as electrically controlled magnetic data storage.

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preprint2008arXiv

Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensitivity of conductance to the magnetization alignment of the electrodes (tunnelling magnetoresistance) and the polarization orientation in the ferroelectric barrier (tunnelling electroresistance), these multiferroic tunnel junctions (MFTJs) may serve as four-state resistance devices. Based on first-principles calculations we demonstrate four resistance states in SrRuO3/BaTiO3/SrRuO3 MFTJs with asymmetric interfaces. We find that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel. These results reveal the exciting prospects of MFTJs for application as multifunctional spintronic devices.

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preprint2006arXiv

Towards ferroelectrically-controlled magnetism: Magnetoelectric effect in Fe/BaTiO3 multilayers

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet interface that alters the interface magnetization when the electric polarization reverses. Using Fe/BaTiO3 multilayers as a representative model we show a sizable difference in magnetic moments of Fe and Ti atoms at the two interfaces dissimilar by the orientation of the local electric dipole moment. The predicted magnetoelectric effect is comparable in magnitude with that observed in elastically-coupled composites and opens a new direction to control magnetic properties of thin-film layered structures by electric fields.

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preprint2005arXiv

Interface-Controlled Ferroelectricity at the Nanoscale

Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises questions about factors controlling ferroelectricity and the nature of the ferroelectric state at the nanoscale. Here we report a first-principles study of KNbO3 ferroelectric thin films placed between two metal electrodes, either SrRuO3 or Pt. We show that the bonding at the ferroelectric-metal interface imposes severe constraints on the displacement of atoms, destroying the bulk tetragonal soft mode in thin ferroelectric films. This does not, however, quench local polarization. If the interface bonding is sufficiently strong the ground state represents a ferroelectric double-domain structure, driven by the intrinsic oppositely-oriented dipole moments at the two interfaces. Although the critical thickness for the net polarization of KNbO3 film is finite - about 1 nm for Pt and 1.8 nm for SrRuO3 electrodes - local polarization persists down to thickness of a unit cell.

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