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Yu-Chih Tseng

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2 publications

preprint2016arXiv

Modeling the band structure of the higher manganese silicides starting from Mn4_4Si7_7

The higher manganese silicides (HMS), with the chemical formula MnSix_x(x≈1.73−1.75x \approx 1.73 - 1.75), have been attracted a lot of attention due to their potential application as thermoelectric materials. While the electronic band structures of HMS have been previously studied using first principle calculations, the relation between crystal structures of Mn and Si atoms and their band structures is not well understood. Here we study Mn4_4Si7_7 using first principle calculations and show that a half cell consisting of five Mn atoms is the essential building block for Mn4_4Si7_7. Using this insight, we construct a minimal tight-binding model for Mn4_4Si7_7 and other HMS including Mn11_{11}Si19_{19} and Mn15_{15}Si26_{26}. The role played by the Si atoms and possible ways to achieve higher figure of merit are also discussed.

preprint2008arXiv

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.

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