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Researcher profile

Youri L. W. van Hees

Youri L. W. van Hees contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phphysics.optics

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Published work

5 published item(s)

preprint2022arXiv

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards high all-optical data writing rates in synthetic ferrimagnets

Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a GdCo alloy, a second laser pulse arriving 7 ps later can consistently switch the magnetization. However, it is as of yet unknown whether the same holds in layered ferrimagnetic systems, which hold much promise for applications. In this work we investigate the minimum time delay required between two subsequent switching events in synthetic ferrimagnetic Co/Gd bilayers using two fs laser pulses. We experimentally demonstrate that the minimum time delay needed for consistent switching can be as low as 10 ps. Moreover, we demonstrate the importance of engineering heat diffusion away from the magnetic material, as well as control over the laser pulse power. This behavior is reproduced using modelling, where we find that the second switch can occur even when the magnetization is not fully recovered. We further confirm that heat diffusion is a critical factor in reducing the time delay for the second switch, while also confirming a critical dependence on laser power.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet

A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we explore the use of dielectric coatings to increase the light absorption by the magnetic metal layer based on the principle of constructive interference. We experimentally show that the switching energy oscillates with the dielectric layer thickness following the light interference profile as obtained from theoretical calculations. Furthermore, the switching threshold fluence can be reduced by at least $80\%$ to 0.6 mJ/cm$^2$ using two dielectric SiO$_2$ layers sandwiching the metal stack, which scales to 15 fJ of incident energy for a cell size of $50^2$ nm$^2$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

All-optical switching of magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya Interaction

Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubble expansion in specially engineered Co/Gd-based multilayer structures. In the absence of any external magnetic fields, we look into the AOS properties and the potential role of the DMI on the AOS process as well as the stability of optically written micro-magnetic domains. Particularly, interesting dynamics are observed in moon-shaped structures written by two successive laser pulses. The stability of domains resulting from an interplay of the dipolar interaction and domain-wall energy are compared to simple analytical models and micromagnetic simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Deterministic all-optical magnetization writing facilitated by non-local transfer of spin angular momentum

Ever since the discovery of all-optical magnetization switching (AOS) around a decade ago, this phenomenon of manipulating magnetization using only femtosecond laser pulses has promised a large potential for future data storage and logic devices. Two distinct mechanisms have been observed, where the final magnetization state is either defined by the helicity of many incoming laser pulses, or toggled by a single pulse. What has thus far been elusive, yet essential for applications, is the deterministic writing of a specific magnetization state with a single laser pulse. In this work we experimentally demonstrate such a mechanism by making use of a spin polarized current which is optically generated in a ferromagnetic reference layer, assisting or hindering switching in an adjacent Co/Gd bilayer. We show deterministic writing of an 'up' and 'down' state using a sequence of 1 or 2 pulses, respectively. Moreover, we demonstrate the non-local origin of the effect by varying the magnitude of the generated spin current. Our demonstration of deterministic magnetization writing could provide an essential step towards the implementation of future optically addressable spintronic memory devices.

0 citations0 reviewsNo code linkedOpen access