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Researcher profile

Hyeonsik Cheong

Hyeonsik Cheong contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

6 published item(s)

preprint2021arXiv

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and Td MoTe2

We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe2 samples and observed both 1T' and Td phases at room temperature. Few-layer 1T' and Td MoTe2 exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases. Furthermore, temperature-dependent Raman measurements revealed a peculiar phase transition behavior in few-layer 1T' MoTe2. In contrast to bulk 1T' MoTe2 crystals where the phase transition to the Td phase occurs at ~250 K, the temperature-driven phase transition to the Td phase is increasingly suppressed as the thickness is reduced, and the transition and the critical temperature varied dramatically from sample to sample even for the same thickness. Raman spectra of intermediate phases that correspond to neither 1T' nor Td phase with different interlayer vibration modes were observed, which suggests that several metastable phases exist with similar total energies.

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preprint2021arXiv

Unidirectional Alignment of AgCN Microwires on Distorted Transition Metal Dichalcogenide Crystals

Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable study on the distorted octahedral phase (1T' or Td) of TMDCs is largely lacking. Here we investigate the assembly behavior of one-dimensional (1D) AgCN microwires on various distorted TMDC crystals, namely 1T'-MoTe2, Td-WTe2, and 1T'-ReS2. The unidirectional alignment of AgCN chains is observed on these crystals, reflecting the symmetry of underlying distorted TMDCs. Polarized Raman spectroscopy and transmission electron microscopy directly confirm that AgCN chains display the remarkable alignment behavior along the distorted chain directions of underlying TMDCs. The observed unidirectional assembly behavior can be attributed to the favorable adsorption configurations of 1D chains along the substrate distortion, which is supported by our theoretical calculations and observation of similar assembly behavior from different cyanide chains. The aligned AgCN microwires can be harnessed as facile markers to identify polymorphs and crystal orientations of TMDCs.

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preprint2020arXiv

Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact

Band gap of monolayer and few layers in two dimensional (2D) semiconductors has usually been measured by optical probing such as photoluminescence (PL). However, if their exfoliated thickness is as large as a few nm (multilayer over ~5L), PL measurements become less effective and inaccurate because the optical transition of 2D semiconductor is changed from direct to indirect mode. Here, we introduce another way to estimate the bandgap of multilayer 2D van der Waals semiconductors; that is utilizing field effect transistor (FET) as a platform. We used graphene (thin graphite or multilayer graphene) contact for multilayer van der Waals channels in FET, because graphene contact would secure ambipolar behavior and enable Schottky contact barrier tuning of FETs with the assistance of top passivation. As a result, the bandgaps of multilayer transition metal dichalcogenides and black phosphorus in unknown thickness were successfully estimated through measuring the temperature-dependent transfer curve characteristics of prepared 2D FETs with graphene contact.

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preprint2020arXiv

Optical phonons of SnSe(1-x)Sx layered semiconductor alloys

The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe1-xSx (0<=x<=1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.

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preprint2011arXiv

Origin of ferroelectric-like hysteresis loop of CaCu3Ti4O12 ceramic studied by impedance and micro-Raman spectroscopy

Ferroelectric-like hysteresis loops of CaCu3Ti4O12 (CCTO) ceramic have been observed. We found that this unusual feature does not arise from the displacement of the Ti ions in the TiO6 octahedron, but apparently comes from the charges at the grain boundaries which consist of a CuO layer. The relaxation time of 2.9 milliseconds by the charges from the grain boundary, nearly corresponding to the inverse P - V sampling frequency of 1kHz, has been found in the impedance spectrum. According to the micro-Raman mapping, the CuO layer is found in the grain boundary and is perfectly distinguished from the CCTO grain.

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preprint2011arXiv

Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy

The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without chemical treatments. The temperature at the laser spot was monitored by the frequency of the Raman 2$D$ band of the Raman scattering spectrum, and the thermal conductivity was deduced by analyzing heat diffusion equations assuming that the substrate is a heat sink at ambient temperature. The obtained thermal conductivity values range from $\sim$1800 Wm$^{-1}$K$^{-1}$ near 325 K to $\sim$710 Wm$^{-1}$K$^{-1}$ at 500 K.

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