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Researcher profile

Yoshitaka Okada

Yoshitaka Okada contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallphysics.optics

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Published work

3 published item(s)

preprint2022arXiv

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

The hot carrier dynamics and its effect on the device performance of GaAs solar cell and InAs/GaAs quantum dot solar cell (QDSC) was investigated. At first, the fundamental operation feature of conventional hot carrier solar cell was simulated based on the detailed balance thermodynamic model. Then we investigated the hot carrier dynamics in the normal junction based solar cell using hydrodynamic/energy Boltzmann transportation model (HETM) where the two temperature (carrier temperature and lattice temperature are treated separately. For the first time, we report an inherent quasi-equivalence between the detailed balance model and HETM model. The inter-link revealed here addresses the energy conservation law used in the detailed balance model from different angle and it paves a way toward an alternative approach to curtail the selective contact constraints used in the conventional hot carrier solar cell. In simulation, a specially designed InAs/GaAs quantum dot solar cell was used in the simulation. By varying the hot carrier energy relaxation time , an increase in the open circuit voltage was clearly found with the increase of . Detailed analysis was presented regarding the spatial distribution of hot carrier temperature and its interplay with electric field and three hot carrier recombination processes (Auger, SRH and radiative)

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preprint2022arXiv

Thinned Germanium Substrates for III-V Multijunction Solar Cells

Multijunction solar cells are usually grown on Ge substrates. This implies several disadvantages that hinder the performance of the whole multijunction and limit their possible applications. The drawbacks caused by the substrate are: heavier devices, higher operation temperatures, lower performance and lack of photon confinement. In this work we propose thinning the substrate as a valid solution to the aforementioned challenges. The influence of the substrate thickness on the Ge subcell performance inside a multijunction is simulated using 2D TCAD tools. Simulation results point to the back surface recombination as the key parameter to enhance the development of thinned Ge subcells. Ge substrates have been thinned down, achieving 115μm thick samples. Finally, solar cells have been manufactured out of the thinned substrates proving a limited degradation and showing the feasibility of this process to manufacture Ge subcells thinned down up to 115μm.

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preprint2020arXiv

Theoretical and Experimental Assessment of Thinned Germanium Substrates for III-V Multijunction Solar Cells

Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the heat absorption. The use of thinned Ge substrates is herein proposed as a possible solution to the aforementioned challenges. The potential of a thinned Ge subcell inside a standard GaInP/Ga(In)As/Ge triple-junction solar cell is assessed by simulations, pointing to an optimum thickness around 5-10 μm. This would reduce the weight by more than 90 %, whereas the available current for the Ge subcell would decrease only by 5 %. In addition, the heat absorption for wavelengths beyond 1600 nm would decrease by more than 85 %. The performance of such a device is highly influenced by the front and back surface recombination of the p-n junction. Simulations remark that good back surface passivation is mandatory to avoid losing power generation by thinning the substrate. In contrast, it has been found that front surface recombination lowers the power generation in a similar manner for thin and thick solar cells. Therefore, the benefits of thinning the substrate are not limited by the front surface recombination. Finally, Ge single-junction solar cells thinned down to 85 μm by wet etching processes are demonstrated. The feasibility of the thinning process is supported by the limited losses measured in the current generation (less than 6 %) and generated voltage (4 %) for the thinnest solar cell manufactured.

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