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Researcher profile

Carlos Algora

Carlos Algora contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2022arXiv

Evidence of enhanced Zn-diffusion observed during the growth of Inverted Metamorphic Solar Cells

Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an inverted multijunction solar cell. Through the analysis of different doping profiles, we provide strong evidence that the diffusion mechanism is (1) triggered by the growth of the tunnel junction cathode and (2) involves point defects. We analyze the implications of Zn-diffusion on the bandgap, the rear-passivation and the minority carrier quality of the GaInP solar subcell by relating the electrical performance of different samples to its corresponding doping profile.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thinned Germanium Substrates for III-V Multijunction Solar Cells

Multijunction solar cells are usually grown on Ge substrates. This implies several disadvantages that hinder the performance of the whole multijunction and limit their possible applications. The drawbacks caused by the substrate are: heavier devices, higher operation temperatures, lower performance and lack of photon confinement. In this work we propose thinning the substrate as a valid solution to the aforementioned challenges. The influence of the substrate thickness on the Ge subcell performance inside a multijunction is simulated using 2D TCAD tools. Simulation results point to the back surface recombination as the key parameter to enhance the development of thinned Ge subcells. Ge substrates have been thinned down, achieving 115μm thick samples. Finally, solar cells have been manufactured out of the thinned substrates proving a limited degradation and showing the feasibility of this process to manufacture Ge subcells thinned down up to 115μm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells

This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar cell based on Ge substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells

Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V multijunction solar cells, which indeed are the solar cells with the highest efficiency, is demonstrated. Firstly, a wide optoelectronic characterization of graphene layers is carried out. Then, the graphene layer is incorporated onto triple-junction solar cells, which decreases their series resistance by 35% (relative), leading to an increase in Fill Factor of 4% (absolute) at concentrations of 1,000 suns. Simultaneously, the optical absorption of graphene produces a relative short circuit current density decrease in the range of 0-1.8%. As a result, an absolute efficiency improvement close to 1% at concentrations of 1,000 suns was achieved with respect to triple junction solar cells without graphene. The impact of incorporating one and two graphene monolayers is also evaluated.

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preprint2020arXiv

Temperature Accelerated Life Test and Failure Analysis on Upright Metamorphic Ga0.37In0.63P/Ga0.83In0.17As/Ge Triple Junction Solar Cells

A temperature accelerated life test on Upright Metamorphic Ga0.37In0.63P/Ga0.83In0.17As/Ge triple-junction solar cells has been carried out. The acceleration has been accomplished by subjecting the solar cells to temperatures (125, 145 and 165°C) significantly higher than the nominal working temperature inside a concentrator (90°C), while the nominal photo-current (500 suns) has been emulated by injecting current in darkness. The failure distributions have been fitted to an Arrhenius-Weibull model resulting in an activation energy of 1.39 eV. Accordingly, a 72 years warranty time for those solar cells for a place like Tucson (AZ, USA), was determined. After the ALT, an intense characterization campaign has been carried out in order to determine the failure origin. We have detected that temperature soak alone is enough to degrade the cell performance by increasing the leakage currents, the series resistance, and the recombination currents. When solar cells were also forward biased an increase of series resistance together with a reduction of short circuit current is detected. The failure analysis shows that: a) several metallization sub-products concentrate in several regions of front metal grid where they poison the silver, resulting in a two times reduction of the metal sheet resistance; b) the metal/cap layer interface is greatly degraded and there is also a deterioration of the cap layer crystalline quality producing a huge increase of the specific front contact resistance, c) the decrease of short circuit current is mainly due to the GaInP top subcell degradation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theoretical and Experimental Assessment of Thinned Germanium Substrates for III-V Multijunction Solar Cells

Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the heat absorption. The use of thinned Ge substrates is herein proposed as a possible solution to the aforementioned challenges. The potential of a thinned Ge subcell inside a standard GaInP/Ga(In)As/Ge triple-junction solar cell is assessed by simulations, pointing to an optimum thickness around 5-10 μm. This would reduce the weight by more than 90 %, whereas the available current for the Ge subcell would decrease only by 5 %. In addition, the heat absorption for wavelengths beyond 1600 nm would decrease by more than 85 %. The performance of such a device is highly influenced by the front and back surface recombination of the p-n junction. Simulations remark that good back surface passivation is mandatory to avoid losing power generation by thinning the substrate. In contrast, it has been found that front surface recombination lowers the power generation in a similar manner for thin and thick solar cells. Therefore, the benefits of thinning the substrate are not limited by the front surface recombination. Finally, Ge single-junction solar cells thinned down to 85 μm by wet etching processes are demonstrated. The feasibility of the thinning process is supported by the limited losses measured in the current generation (less than 6 %) and generated voltage (4 %) for the thinnest solar cell manufactured.

0 citations0 reviewsNo code linkedOpen access