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Researcher profile

Yoshio Nishi

Yoshio Nishi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.opticscond-mat.str-el

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Published work

8 published item(s)

preprint2016arXiv

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2

Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crystals, then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 um long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3 to 20 layers thick). High-field electrical measurements and electro-thermal modeling demonstrate that ultra-thin WTe2 can carry remarkably high current density (approaching 50 MA/cm2, higher than most common interconnect metals) despite a very low thermal conductivity (of the order ~3 W/m/K). These results suggest several pathways for air-stable technological viability of this layered semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterization of electronic structure of periodically strained graphene

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. We measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively. During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ~100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2

Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy

The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals

One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3 . Photoluminescence from the cavity modes is observed in the visible wavelength range 600-820 nm. Studies of the lossy characteristics of the cavities are conducted at varying temperatures and pump powers. Free carrier absorption effects are found to be significant at pump powers as low as a few hundred nanowatts.

0 citations0 reviewsNo code linkedOpen access