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Yoshihisa Harada

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cond-mat.mtrl-sci cond-mat.supr-con

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preprint2020arXiv

Revisiting the phase diagram of T*-type La $_{1-x/2}$ Eu $_{1-x/2}$ Sr $_x$ CuO $_4$ using Oxygen $K$ -edge X-ray absorption spectroscopy

Oxygen $K$ -edge X-ray absorption spectroscopy measurements were conducted on T*-type La $_{1-x/2}$ Eu $_{1-x/2}$ Sr $_x$ CuO $_4$ (LESCO) to estimate the hole density ( $n_{\rm h}$ ) and investigate the oxidation annealing effect on $n_{\rm h}$ . A drastic increase in $n_{\rm h}$ due to annealing was found. The increase in $n_{\rm h}$ cannot be explained solely by the oxygen gain due to annealing, suggesting that delocalized holes are introduced into the CuO $_2$ plane. A phase diagram of LESCO was redrawn against $n_{\rm h}$ .

preprint2016arXiv

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Clarification of the position of the Fermi level ( $E_\mathrm{F}$ ) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga $_{1-x}$ Mn $_x$ As (GaMnAs). In a recent publication, Souma $et$ $al$ . [Sci. Rep. $\mathbf{6}$ , 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.

preprint2013arXiv

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.

preprint2012arXiv

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridinic-N (N bonded to two C nearest neighbours) and graphitic-N (N bonded to three C nearest neighbours). Distinct electronic states of localized π states were found to appear in the occupied and unoccupied regions near the Fermi level at the carbon atoms around pyridinic-N and graphitic-N species, respectively. The origin of these states is discussed based on the experimental results and theoretical simulations.

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Yoshihisa Harada

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4 publications

Revisiting the phase diagram of T*-type La $_{1-x/2}$ Eu $_{1-x/2}$ Sr $_x$ CuO $_4$ using Oxygen $K$ -edge X-ray absorption spectroscopy

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

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Yoshihisa Harada

Research overview

Is this your work?

4 publications

Revisiting the phase diagram of T*-type La1−x/2_{1-x/2}1−x/2​Eu1−x/2_{1-x/2}1−x/2​Srx_xx​CuO4_44​ using Oxygen KKK-edge X-ray absorption spectroscopy

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

See the researcher in context

Building this map preview

Revisiting the phase diagram of T*-type La $_{1-x/2}$ Eu $_{1-x/2}$ Sr $_x$ CuO $_4$ using Oxygen $K$ -edge X-ray absorption spectroscopy