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Researcher profile

Yoshihiro Iwasa

Yoshihiro Iwasa contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.str-elphysics.opticsquant-ph

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Published work

9 published item(s)

preprint2022arXiv

Giant intrinsic rectification and nonlinear Hall effect under time-reversal symmetry in a trigonal superconductor

Nonreciprocal or nonlinear responses in symmetry-broken systems are powerful probes of emergent properties in quantum materials, including superconductors, magnets, and topological materials. Recently, vortex matter has been recognized as a key ingredient of giant nonlinear responses in superconductors with broken inversion symmetry. However, nonlinear effects have been probed as excess voltage only under broken time-reversal symmetry. In this study, we report intrinsic rectification and nonlinear anomalous Hall effect under time-reversal symmetry in the noncentrosymmetric trigonal superconductor PbTaSe2. The magnitude of anomalous nonlinear transport is two orders of magnitude larger than those in the normal state, and the directional dependence of nonlinear signals are fully consistent with crystal symmetry. The enhanced nonlinearity is semiquantitatively explained by the asymmetric Hall effect of vortex-antivortex string pairs in noncentrosymmetric systems. This study enriches the literature on nonlinear phenomena by revealing a novel aspect of quantum transport in noncentrosymmetric superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $μ$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$μ$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnon-exciton proximity coupling at a van der Waals heterointerface

Spin and photonic systems are at the heart of modern information devices and emerging quantum technologies. An interplay between electron-hole pairs (excitons) in semiconductors and collective spin excitations (magnons) in magnetic crystals would bridge these heterogeneous systems, leveraging their individual assets in novel interconnected devices. Here, we report the magnon-exciton coupling at the interface between a magnetic thin film and an atomically-thin semiconductor. Our approach allies the long-lived magnons hosted in a film of yttrium iron garnet (YIG) to strongly-bound excitons in a flake of a transition metal dichalcogenide, MoSe$_2$. The magnons induce on the excitons a dynamical valley Zeeman effect ruled by interfacial exchange interactions. This nascent class of hybrid system suggests new opportunities for information transduction between microwave and optical regions.

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preprint2020arXiv

Antiferromagnet-semiconductor van der Waals heterostructures: interlayer interplay of exciton with magnetic ordering

Van der Waals (vdW) heterostructures have attracted great interest because of their rich material combinations.The discovery of two-dimensional magnets has provided a new platform for magnetic vdW heterointerfaces; however, research on magnetic vdW heterointerfaces has been limited to those with ferromagnetic surfaces. Here we report a magnetic vdW heterointerface using layered intralayer-antiferromagnetic MPSe3 (M=Mn, Fe) and monolayer transition metal dichalcogenides (TMDs). We found an anomalous upshift of the excitonic peak in monolayer TMDs below the antiferromagnetic transition temperature in the MPSe3, capturing a signature of the interlayer exciton-magnon coupling. This is a concept extended from single materials to heterointerfaces. Moreover, this coupling strongly depends on the in-plane magnetic structure and stacking direction, showing its sensitivity to their magnetic interfaces. Our finding offers an opportunity to investigate interactions between elementary excitations in different materials across interfaces and to search for new functions of magnetic vdW heterointerfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dynamical vortex phase diagram of 2D superconductivity in gated MoS2

Recent discoveries of two-dimensional (2D) superconductors have uncovered various new aspects of physical properties including vortex matter. In this paper, we report transport properties and a dynamical phase diagram at zero magnetic field in ion-gated MoS2. In addition to the universal jump in the current-voltage characteristic showing unambiguous evidence of the Berezinskii-Kosterlitz-Thouless (BKT) transition, we observed multiple peaks in the temperature- and current-derivative of the electrical resistance, based on which a dynamical phase diagram in the current-temperature plane was constructed. We found current-induced dynamical states of vortex-antivortex pairs, containing that with the phase slip line. Also, we present a global phase diagram of vortices in gated MoS2 which captures the nature of vortex matter of clean 2D superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pressure-induced topological phase transition in noncentrosymmetric elemental Tellurium

Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Quantum and classical ratchet motions of vortices in a 2D trigonal superconductor

Dynamical behavior of vortices plays central roles in the quantum phenomena of two-dimensional (2D) superconductors. Quantum metallic state, for example, showing an anomalous temperature-independent resistive state down to low-temperatures, has been a common subject in recently developed 2D crystalline superconductors, whose microscopic origin is still under debate. Here, we unveil a new aspect of the vortex dynamics in a noncentrosymmetric 2D crystalline superconductor of MoS$_{2}$ through the nonreciprocal transport measurement. The second harmonic resistance $R^{2w}$ at low temperature with high current indicates the classical vortex flow accompanying the ratchet motion. Furthermore, we found that $R^{2w}$ is substantially suppressed in the quantum metallic state with low current region, allowing identification of the quantum and classical ratchet motions of vortices by the magnitude of the second harmonic generation. This suggests that nonreciprocal transport measurement can be a powerful tool to probe the vortex dynamics in noncentrosymmetric 2D superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm-2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/Vs. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.

0 citations0 reviewsNo code linkedOpen access