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Yoshihiro Iwasa

Yoshihiro Iwasa appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-elcond-mat.softphysics.opticsquant-ph

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Published work

21 published item(s)

preprint2022arXiv

Giant intrinsic rectification and nonlinear Hall effect under time-reversal symmetry in a trigonal superconductor

Nonreciprocal or nonlinear responses in symmetry-broken systems are powerful probes of emergent properties in quantum materials, including superconductors, magnets, and topological materials. Recently, vortex matter has been recognized as a key ingredient of giant nonlinear responses in superconductors with broken inversion symmetry. However, nonlinear effects have been probed as excess voltage only under broken time-reversal symmetry. In this study, we report intrinsic rectification and nonlinear anomalous Hall effect under time-reversal symmetry in the noncentrosymmetric trigonal superconductor PbTaSe2. The magnitude of anomalous nonlinear transport is two orders of magnitude larger than those in the normal state, and the directional dependence of nonlinear signals are fully consistent with crystal symmetry. The enhanced nonlinearity is semiquantitatively explained by the asymmetric Hall effect of vortex-antivortex string pairs in noncentrosymmetric systems. This study enriches the literature on nonlinear phenomena by revealing a novel aspect of quantum transport in noncentrosymmetric superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $μ$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$μ$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnon-exciton proximity coupling at a van der Waals heterointerface

Spin and photonic systems are at the heart of modern information devices and emerging quantum technologies. An interplay between electron-hole pairs (excitons) in semiconductors and collective spin excitations (magnons) in magnetic crystals would bridge these heterogeneous systems, leveraging their individual assets in novel interconnected devices. Here, we report the magnon-exciton coupling at the interface between a magnetic thin film and an atomically-thin semiconductor. Our approach allies the long-lived magnons hosted in a film of yttrium iron garnet (YIG) to strongly-bound excitons in a flake of a transition metal dichalcogenide, MoSe$_2$. The magnons induce on the excitons a dynamical valley Zeeman effect ruled by interfacial exchange interactions. This nascent class of hybrid system suggests new opportunities for information transduction between microwave and optical regions.

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preprint2020arXiv

Antiferromagnet-semiconductor van der Waals heterostructures: interlayer interplay of exciton with magnetic ordering

Van der Waals (vdW) heterostructures have attracted great interest because of their rich material combinations.The discovery of two-dimensional magnets has provided a new platform for magnetic vdW heterointerfaces; however, research on magnetic vdW heterointerfaces has been limited to those with ferromagnetic surfaces. Here we report a magnetic vdW heterointerface using layered intralayer-antiferromagnetic MPSe3 (M=Mn, Fe) and monolayer transition metal dichalcogenides (TMDs). We found an anomalous upshift of the excitonic peak in monolayer TMDs below the antiferromagnetic transition temperature in the MPSe3, capturing a signature of the interlayer exciton-magnon coupling. This is a concept extended from single materials to heterointerfaces. Moreover, this coupling strongly depends on the in-plane magnetic structure and stacking direction, showing its sensitivity to their magnetic interfaces. Our finding offers an opportunity to investigate interactions between elementary excitations in different materials across interfaces and to search for new functions of magnetic vdW heterointerfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dynamical vortex phase diagram of 2D superconductivity in gated MoS2

Recent discoveries of two-dimensional (2D) superconductors have uncovered various new aspects of physical properties including vortex matter. In this paper, we report transport properties and a dynamical phase diagram at zero magnetic field in ion-gated MoS2. In addition to the universal jump in the current-voltage characteristic showing unambiguous evidence of the Berezinskii-Kosterlitz-Thouless (BKT) transition, we observed multiple peaks in the temperature- and current-derivative of the electrical resistance, based on which a dynamical phase diagram in the current-temperature plane was constructed. We found current-induced dynamical states of vortex-antivortex pairs, containing that with the phase slip line. Also, we present a global phase diagram of vortices in gated MoS2 which captures the nature of vortex matter of clean 2D superconductors.

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preprint2019arXiv

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pressure-induced topological phase transition in noncentrosymmetric elemental Tellurium

Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Quantum and classical ratchet motions of vortices in a 2D trigonal superconductor

Dynamical behavior of vortices plays central roles in the quantum phenomena of two-dimensional (2D) superconductors. Quantum metallic state, for example, showing an anomalous temperature-independent resistive state down to low-temperatures, has been a common subject in recently developed 2D crystalline superconductors, whose microscopic origin is still under debate. Here, we unveil a new aspect of the vortex dynamics in a noncentrosymmetric 2D crystalline superconductor of MoS$_{2}$ through the nonreciprocal transport measurement. The second harmonic resistance $R^{2w}$ at low temperature with high current indicates the classical vortex flow accompanying the ratchet motion. Furthermore, we found that $R^{2w}$ is substantially suppressed in the quantum metallic state with low current region, allowing identification of the quantum and classical ratchet motions of vortices by the magnitude of the second harmonic generation. This suggests that nonreciprocal transport measurement can be a powerful tool to probe the vortex dynamics in noncentrosymmetric 2D superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO$_3$ thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals

Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p-n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was determined as = 0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ~ 190 cm^2/Vs at 170 K, which is one order of magnitude larger than the electron mobility. By inducing an ultra-high carrier density of ~ 10^14 cm^-2, an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Memristive phase switching in two-dimensional crystals

Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significantly changed from bulk systems. However, there are few attempts to realize novel phenomena in correlated 2D crystals. Here, we report memristive phase switching in nano-thick crystals of 1T-type tantalum disulfide (1T-TaS2), a first-order phase transition system. The ordering kinetics of the phase transition was revealed to become extremely slow as the thickness is reduced, resulting in an emergence of metastable states. Furthermore, we realized the unprecedented memristive switching to multi-step non-volatile states by applying in-plane electric field. The reduction of thickness is essential to achieve such non-volatile electrical switching behavior. The thinning-induced slow kinetics possibly makes the various metastable states robust and consequently realizes the non-volatile memory operation. The present result indicates that 2D crystal with correlated electrons is a novel nano-system to explore and functionalize multiple metastable states which are inaccessible in its bulk form.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Metallic ground state in an ion-gated two-dimensional superconductor

Recently emerging two-dimensional (2D) superconductors in atomically thin layers and at heterogeneous interfaces are attracting growing interest in condensed matter physics. Here, we report that ion-gated ZrNCl surface, exhibiting a dome-shaped phase diagram with a maximum critical temperature of 14.8 kelvin, behaves as a superconductor persisting to the 2D limit. The superconducting thickness estimated from the upper critical fields is ~ 1.8 nanometers, which is thinner than one-unit-cell. The majority of the vortex phase diagram down to 2 kelvin is occupied by a metallic state with a finite resistance, owing to the quantum creep of vortices caused by extremely weak pinning and diminishing disorder. Our findings highlight the potential of electric-field-induced superconductivity, establishing a new platform for accessing quantum phases in clean 2D superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modulation of ferromagnetism in (In,Fe)As quantum wells via electrically controlled deformation of the electron wavefunctions

We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the electron wavefunctions ϕi in the QW, such that the overlap of ϕi and the (In,Fe)As layer is modified. The Curie temperature is largely changed by 42%, whereas the change in sheet carrier concentration is 2 - 3 orders of magnitude smaller than that of previous gating experiments. This result provides a new approach for versatile, low power, and ultrafast manipulation of magnetization.

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preprint2015arXiv

Two-Dimensional Valley Electrons and Excitons in Noncentrosymmetric 3R MoS$_{2}$

We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H polytype the bands have dispersion in all the three dimensions. According to our first-principles band structure calculations, the valley states have no interlayer hopping in 3R-MoS$_{2}$, which is proved to be the consequence of the rotational symmetry of the Bloch functions. By measuring the reflectivity spectra and analyzing an anisotropic hydrogen atomic model, we confirm that the valley excitons in 3R-MoS$_{2}$ have two-dimensional hydrogen-like spectral series, and the spreads of the wave function are smaller than the interlayer distance. In contrast, the valley excitons in 2H-MoS$_{2}$ are well described by the three-dimensional model and thus not confined in a single layer. Our results indicate that the dimensionality of the valley degree of freedom can be controlled simply by the stacking geometry, which can be utilized in future valleytronics.

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preprint2015arXiv

Ultrahigh Pressure Superconductivity in Molybdenum Disulfide

Superconductivity commonly appears under pressure in charge density wave (CDW)-bearing transition metal dichalcogenides (TMDs), but has emerged so far only via either intercalation with electron donors or electrostatic doping in CDW-free TMDs. Theoretical calculations have predicted that the latter should be metallized through bandgap closure under pressure, but superconductivity remained elusive in pristine 2H-MoS2 upon substantial compression, where a pressure of up to 60 GPa only evidenced the metallic state. Here we report the emergence of superconductivity in pristine 2H-MoS2 at 90 GPa. The maximum onset transition temperature Tc(onset) of 11.5 K, the highest value among TMDs and nearly constant from 120 up to 200 GPa, is well above that obtained by chemical doping but comparable to that obtained by electrostatic doping. Tc(onset) is more than an order of magnitude larger than present theoretical expectations, raising questions on either the current calculation methodologies or the mechanism of the pressure-induced pairing state. Our findings strongly suggest further experimental and theoretical efforts directed toward the study of the pressure-induced superconductivity in all CDW-free TMDs.

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preprint2014arXiv

Strong Suppression of Coherence Effect and Appearance of Pseudogap in Layered Nitride Superconductor Li_xZrNCl: ^91Zr- and ^15N- NMR Studies

We present NMR measurements of the layered nitride superconductor Li_xZrNCl. The nuclear spin-lattice relaxation rate, 1/T_1, shows that the coherence peak is strongly suppressed in Li_xZrNCl in contrast to conventional BCS superconductors. In the lightly-doped region close to the insulating state, the system shows a gap-like behavior, i.e., pseudogap, that is characterized by a reduction in the magnitude of the Knight shift and 1/T_1T. A higher superconducting (SC) transition temperature, T_c, is achieved by coexisting with the pseudogap state. These unusual behaviors, which deviate from the ordinary BCS framework, are the key ingredients to understanding the SC mechanism of Li_xZrNCl.

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preprint2013arXiv

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

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preprint2013arXiv

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like (Ga,Mn)As. Recent two studies on the control of ferromagnetism in anatase (Ti,Co)O2 at room temperature via electric field effect [Y. Yamada et al., Science 332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett. 99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase (Ti,Co)O2 and discuss the carrier mediated ferromagnetism.

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preprint2013arXiv

Large-Area Aiming Synthesis of WSe2 Monolayers

The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics and optoelectronic devices. Recent reports have demonstrated the growth of large-size 2-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown.

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preprint2010arXiv

Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm-2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/Vs. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.

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