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Researcher profile

Yoshiaki Sato

Yoshiaki Sato contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

3 published item(s)

preprint2022arXiv

Precise magnetization measurements down to 500 mK using a miniature 3He cryostat and a closed-cycle 3He gas handling system installed in a SQUID magnetometer without continuous-cooling functionality

We have conducted precise magnetization measurements down to 0.5 K with a miniature 3He cryostat and a closed-cycle 3He gas handling system for a commercial superconducting quantum interference device magnetometer [Magnetic Property Measurement System (Quantum Design)]. The gas handling system contains two sorption pumps filled with granular charcoals. We pressurize 3He gas up to ambient pressure for the liquification at 3 K and then pump the vaper for cooling. The lowest sample temperature is ~ 0.5 K and it can persist for 34 hours. We demonstrate the performance of the system by observing the Meissner effect of aluminum below the superconducting transition temperature ~ 1 K. We also measured the magnetization curve of the heavy fermion superconductor CeCoIn5 resulting in successful observation of the lower critical field at 0.5 K.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting Fermi surface under electron doping.

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preprint2011arXiv

Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices

We investigate the chemisorptions of oxygen molecules on bilayer graphene (BLG) and its electrically modified charge-doping effect using conductivity measurement of the field effect transistor channeled with BLG. We demonstrate that the change of the Fermi level by manipulating the gate electric field significantly affects not only the rate of molecular adsorption but also the carrier-scattering strength of adsorbed molecules. Exploration of the charge transfer kinetics reveals the electrochemical nature of the oxygen adsorption on BLG. [This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, © American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/nl202002p.]

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