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Hiroshi M. Yamamoto

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Published work

5 published item(s)

preprint2022arXiv

Chirality-Induced Spin Filtering in Pseudo Jahn-Teller Molecules

Chirality-induced spin selectivity (CISS) refers to an ability to induce a spin polarization of an electron transmitted through chiral materials. An important experimental observation is that incredibly large spin polarization is realized at room temperature even for organic molecules that have weak spin-orbit coupling (SOC), although SOC is the only interaction that can manipulate the electrons' spins in the setups. Therefore, the mechanism of the CISS needs to be constructed in a way insensitive to or enhancing the magnitude of the SOC strength. In this paper, we describe a theoretical study of CISS with a model chiral molecule that belongs to the point group $\mathrm{C}_3$. In this molecule, electronic translational and rotational degrees of freedom for an injected electron are coupled to one another via the nuclear vibrational mode with a pseudo Jahn-Teller effect. By properly taking the molecular symmetry as well as the time-reversal symmetry into account and classifying the molecular ground states by their angular- and spin-momentum quantum numbers, we show that the chiral molecule can act as an efficient spin filter. The efficiency of this spin filtering can be nearly independent of the SOC strength in this model, while it well exceeds the spin polarization relying solely on the SOC. The nuclear vibrations turned out to have the role of not only mediating the translation-rotation coupling, but also enhancing the spin-filtering efficiency.

preprint2022arXiv

Comparison of the charge-crystal and charge-glass state in geometrically frustrated organic conductors studied by fluctuation spectroscopy

We present a systematic investigation of the low-frequency charge carrier dynamics in different charge states of the organic conductors $θ$-(BEDT-TTF)$_2$$M$Zn(SCN)$_4$ with $M$=Rb,Tl, which result from quenching or relaxing the charge degrees of freedom on a geometrically frustrated triangular lattice. Due to strong electronic correlations these materials exhibit a charge-ordering transition, which can be kinetically avoided by rapid cooling resulting in a so-called charge-glass state without long-range order. The combination of fluctuation spectroscopy and a heat pulse method allows us to study and compare the resistance fluctuations in the low-resistive quenched and the high-resistive charge-ordered state, revealing striking differences in the respective noise magnitudes. For both compounds, we find strongly enhanced resistance fluctuations right at the metal-insulator transition and a broad noise maximum in the slowly cooled charge-crystal state with partly dominating two-level processes revealing characteristic activation energies.

preprint2022arXiv

Simultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl

The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).

preprint2016arXiv

Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting Fermi surface under electron doping.

preprint2013arXiv

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.