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Yongjin Lee

Yongjin Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciComputer Visioncond-mat.softMachine Learningphysics.chem-ph

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Published work

10 published item(s)

preprint2022arXiv

Confidence Guided Depth Completion Network

The paper proposes an image-guided depth completion method to estimate accurate dense depth maps with fast computation time. The proposed network has two-stage structure. The first stage predicts a first depth map. Then, the second stage further refines the first depth map using the confidence maps. The second stage consists of two layers, each of which focuses on different regions and generates a refined depth map and a confidence map. The final depth map is obtained by combining two depth maps from the second stage using the corresponding confidence maps. Compared with the top-ranked models on the KITTI depth completion online leaderboard, the proposed model shows much faster computation time and competitive performance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Gap Opening in Twisted Double Bilayer Graphene by Crystal fields

Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic interactions and elastic relaxations, but crystal fields have not received the attention they deserve. Here we show that the bandstructure of large-angle twisted double bilayer graphene is strongly modified by crystal fields. In particular, we experimentally demonstrate that twisted double bilayer graphene, encapsulated between hBN layers, exhibits an intrinsic bandgap. By the application of an external field, the gaps in the individual bilayers can be closed, allowing to determine the crystal fields. We find that crystal fields point from the outer to the inner layers with strengths in the bottom (top) bilayer of -0.13 V/nm (0.12 V/nm). We show both by means of first principles calculations and low energy models that crystal fields open a band gap in the groundstate. Our results put forward a physical scenario in which a crystal field effect in carbon substantially impacts the low energy properties of twisted double bilayer graphene, suggesting that such contributions must be taken into account in other regimes to faithfully predict the electronic properties of twisted graphene multilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The Electronic Thickness of Graphene

The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene

Owing to the spin, valley, and orbital symmetries, the lowest Landau level (LL) in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscopy, we investigate the energy gaps of integer and fractional quantum Hall states in bilayer graphene with controlled layer polarization. The state at filling factor ν=1 has two distinct phases: a layer polarized state that has a larger energy gap and is stabilized by high electric field, and a hitherto unobserved interlayer coherent state with a smaller gap that is stabilized by large magnetic field. In contrast, the ν=2/3 quantum Hall state and a feature at ν=1/2 are only resolved at finite electric field and large magnetic field. These results underscore the importance of controlling layer polarization in understanding the competing symmetries in the unusual QH system of BLG.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating

Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 femtoseconds. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 femtosecond laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity between 500 and 1500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hydration of ions in two dimensional water

We present a 2D lattice model of water to study the effects of ion hydration on the properties of water. We map the water molecules as lattice particles consisting of a single Oxygen at the center of a site and two Hydrogen atoms on each side. The internal state of the system, such as the dipole moment at a site, is defined with respect to the location of the Hydrogen atoms at the site depending on their role in Hydrogen bonds (H-bonds) being a donor or an acceptor. We study the influence of the charge and the radius of the ion on the insertion energy and on the H-bonds in the first and second hydration layers around the ion and in the bulk. In particular we analyze how the competing interactions of the short-ranged H-bonds and the long-ranged electrostatics influence the hydration properties. The role of the ion both as a source of the electrostatic interactions as well as a defect is also discussed. Our model also shows the well known fact that the polarizability of the water molecules destroys the hydrogen bond network and increases the dipole moment of the molecules near the ion.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies

We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain.

0 citations0 reviewsNo code linkedOpen access