Researcher profile

Annika Kurzmann

Annika Kurzmann contributes to research discovery and scholarly infrastructure.

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Published work

12 published item(s)

preprint2022arXiv

Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots

Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet--valley-singlet ground state, valley-blockade is observed; and with the spin-singlet--valley-triplet ground state, robust spin blockade is shown.

preprint2022arXiv

Pushing the limits in real-time measurements of quantum dynamics

Time-resolved studies of quantum systems are the key to understand quantum dynamics at its core. The real-time measurement of individual quantum numbers as they switch between certain discrete values, well known as random telegraph signal, is expected to yield maximal physical insight. However, the signal suffers from both systematic errors, such as a limited time resolution and noise from the measurement apparatus, as well as statistical errors due to a limited amount of data. Here we demonstrate that an evaluation scheme based on factorial cumulants can reduce the influence of such errors by orders of magnitude. The error resilience is supported by a general theory for the detection errors as well as experimental data of single-electron tunnelling through a self-assembled quantum dot. Thus, factorial cumulants push the limits in the analysis of random telegraph data which represent a wide class of experiments in physics, chemistry, engineering and life sciences.

preprint2021arXiv

Kondo effect and spin-orbit coupling in graphene quantum dots

The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.

preprint2021arXiv

Single-shot readout in graphene quantum dots

Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different experimental approaches to measure the decay times of excited states. The first is based on direct current measurements through the quantum device. Pulse sequences are applied to control the occupation of ground and excited states. We observe a lower bound for the excited state decay on the order of hundred microseconds. The second approach employs a capacitively coupled charge sensor to study the time dynamics of the excited state using the Elzerman technique. We find that the relaxation time of the excited state is of the order of milliseconds. We perform single-shot readout of our two-level system with a visibility of $87.1\%$, which is an important step for developing a quantum information processor in graphene.

preprint2020arXiv

Internal Photo Effect from a Single Quantum Emitter

We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders of magnitude by adjusting the excitation intensity. Our findings show that a process that is well known in single atom spectroscopy (i.e. photo ionization) can also be observed in the solid state. The results also quantify an important, but mostly neglected, mechanism that may fundamentally limit the coherence times in solid-state quantum optical devices.

preprint2020arXiv

Scanning Gate Microscopy of Localized States in a gate-defined Bilayer Graphene Channel

We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel. All our observations can be well explained within the framework of stochastic Coulomb blockade.

preprint2020arXiv

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.

preprint2019arXiv

Fully automated identification of 2D material samples

Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample identification of experimentally relevant two-dimensional materials. We show how to approach classification of imperfect imbalanced data sets using an iterative application of multiple noisy neural networks. We embed the trained classifier into a comprehensive solution for end-to-end automatized data processing and sample identification.

preprint2019arXiv

Gap Opening in Twisted Double Bilayer Graphene by Crystal fields

Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic interactions and elastic relaxations, but crystal fields have not received the attention they deserve. Here we show that the bandstructure of large-angle twisted double bilayer graphene is strongly modified by crystal fields. In particular, we experimentally demonstrate that twisted double bilayer graphene, encapsulated between hBN layers, exhibits an intrinsic bandgap. By the application of an external field, the gaps in the individual bilayers can be closed, allowing to determine the crystal fields. We find that crystal fields point from the outer to the inner layers with strengths in the bottom (top) bilayer of -0.13 V/nm (0.12 V/nm). We show both by means of first principles calculations and low energy models that crystal fields open a band gap in the groundstate. Our results put forward a physical scenario in which a crystal field effect in carbon substantially impacts the low energy properties of twisted double bilayer graphene, suggesting that such contributions must be taken into account in other regimes to faithfully predict the electronic properties of twisted graphene multilayers.

preprint2019arXiv

Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe$_2$ at room temperature

Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect has been widely studied in heavy metals with strong spin-orbit coupling. While the high crystal symmetry in these materials limits the conversion to the orthogonal configuration, unusual configurations are expected in low symmetry transition metal dichalcogenide semimetals, which could add flexibility to the electrical injection and detection of pure spin currents. Here, we report the observation of spin-to-charge conversion in MoTe$_2$ flakes, which are stacked in graphene lateral spin valves. We detect two distinct contributions arising from the conversion of two different spin orientations. In addition to the conventional conversion where the spin polarization is orthogonal to the charge current, we also detect a conversion where the spin polarization and the charge current are parallel. Both contributions, which could arise either from bulk spin Hall effect or surface Edelstein effect, show large efficiencies comparable to the best spin Hall metals and topological insulators. Our finding enables the simultaneous conversion of spin currents with any in-plane spin polarization in one single experimental configuration.

preprint2019arXiv

Real-time detection of every Auger recombination in a self-assembled quantum dot

Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time in the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time every quantum event of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity; independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process, it also demonstrates the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.

preprint2019arXiv

The Electronic Thickness of Graphene

The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.