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Researcher profile

Yong-Wei Zhang

Yong-Wei Zhang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

15 published item(s)

preprint2022arXiv

Anharmonic quantum thermal transport across a van der Waals interface

We investigate the anharmonic phonon scattering across a weakly interacting interface by developing a quantum mechanics-based theory. We find that the contribution from anharmonic three-phonon scatterings to interfacial thermal conductance can be cast into Landauer formula with transmission function being temperature-dependent. Surprisingly, in the weak coupling limit, the transmission due to anharmonic phonon scattering is unbounded with increasing temperature, which is physically impossible for two-phonon processes. We further reveal that the anharmonic contribution in a real heterogeneous interface (e.g., between graphene and monolayer molybdenum disulfide) can dominate over the harmonic process even at room temperature, highlighting the important role of anharmonicity in weakly interacting heterogeneous systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Effects of high order interatomic potential on elastic phonon scatterings

Interatomic potentials beyond quadratic order provide scattering sources for phonon transport in lattice. By using a weakly-interacting interface model, we investigated the relation between the order of interatomic potential and the multiple-phonon scattering process. We find that high order interatomic potential not only causes multiple-phonon scattering processes, but also has significant impacts on elastic phonon scattering processes. Using fourth order potential as an example, we show that it can significantly affects elastic phonon scatterings, through the formation of localized phonons. Such impact is closely related to the correlations of interfacial atoms and it becomes more significant with increasing temperature. Our work suggests that it is insufficient to consider only quadratic potential to investigate elastic phonon transport.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (1) The SBH for the monolayer MoS2 with defects is universally higher than that for its defect-free counterpart. (2) S divacancy and MoS antisite defects increase the SBH to a larger extent than S monovacancy. (3) A defect located in the inner sublayer of MoS2, which is adjacent to Au substrate, increases the SBH to a larger extent than that in the outer sublayer of MoS2. (4) An increase in defect density increases the SBH. These findings indicate a large variation of SBH with the defect type, location, and concentration. We also compare our results with previously experimentally measured SBH for Au/MoS2 contact and postulate possible reasons for the large differences among existing experimental measurements and between experimental measurements and theoretical predictions. The findings and insights revealed here may provide practice guidelines for modulation and optimization of SBH in Au/MoS2 and similar heterojunctions via defect engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Extraordinary strain hardening from dislocation loops in defect-free Al nanocubes

The interaction of crystalline defects leads to strain hardening in bulk metals. Metals with high stacking fault energy (SFE), such as aluminum, tend to have low strain hardening rates due to an inability to form stacking faults and deformation twins. Here, we use in situ SEM mechanical compressions to find that colloidally synthesized defect-free 114 nm Al nanocubes combine a high linear strain hardening rate of 4.1 GPa with a high strength of 1.1 GPa. These nanocubes have a 3 nm self-passivating oxide layer that has a large influence on mechanical behavior and the accumulation of dislocation structures. Post-compression TEM imaging reveals stable prismatic dislocation loops and the absence of stacking faults. MD simulations relate the formation of dislocation loops and strain hardening to the surface oxide. These results indicate that slight modifications to surface and interfacial properties can induce enormous changes to mechanical properties in high SFE metals.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface

Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal dichalcogenide (TMD) semiconductors. We model the phononic and electronic contributions to the thermal boundary conductance (TBC) variability for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2}$ interface. A phenomenological theory to model diffuse phonon transport at disordered interfaces is introduced and yields $G$=13.5 and 12.4 MW/K/m$^{2}$ at 300 K for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2} $ interface, respectively. We compare its predictions to those of the coherent phonon model and find that the former fits the MoS$_{2}$-SiO$_{2}$ data from experiments and simulations significantly better. Our analysis suggests that heat dissipation at the TMD-SiO$_{2}$ interface is dominated by phonons scattered diffusely by the rough interface although the electronic TBC contribution can be significant even at low electron densities ($n\leq10^{12}$ cm$^{-2}$) and may explain some of the variation in the experimental TBC data from the literature. The physical insights from our study can be useful for the development of thermally aware designs in TMD-based nanoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A potential superhard carbon allotrope: T5-carbon

A novel stable carbon allotrope is predicted by using first-principles calculations. This allotrope is obtained by replacing one of the two atoms in the primitive cell of diamond with a carbon tetrahedron, thus it contains five atoms in one primitive cell, termed T5-carbon. The stabilities of T5-carbon are checked in structural, thermal, vibrational and energy calculations. The calculations on electronic, thermal, and mechanical properties reveal that T5-carbon is a semiconductor with an indirect band gap of 3.18 eV, and has a lattice thermal conductivity of 409 W/mK. More importantly, the Vickers hardness of T5-carbon is 76.5 GPa which is lower than that of diamond but larger than those of T-carbon and cubic boron nitride, confirming the superhard properties of T5-carbon, suggesting its wide applications in mechanical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Three-terminal interface as a thermoelectric generator beyond Seebeck effect

We investigate thermoelectric transport through interfaces with inelastic scatterings by developing a quantum theory, which has been extensively validated by existing theories. We find that under temperature bias, while a two-terminal conductor-insulator interface behaves only as a thermal resistor, a three-terminal conductor-insulator-conductor interface can function as an electricity generator caused by phonon-mediated electron scatterings with heat-charge current separation. Unlike conventional thermoelectrics which is a property of a bulk caused by the Seebeck effect, this thermoelectric behavior is a property of an interface driven by electron-phonon scatterings.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Energetics, Charge Transfer and Magnetism of Small Molecules Physisorbed on Phosphorene

First-principles calculations are performed to investigate the interaction of physisorbed small molecules, including CO, H2, H2O, NH3, NO, NO2, and O2, with phosphorene, and their energetics, charge transfer, and magnetic moment are evaluated on the basis of dispersion corrected density functional theory. Our calculations reveal that CO, H2, H2O and NH3 molecules act as a weak donor, whereas O2 and NO2 act as a strong acceptor. While NO molecule donates electrons to graphene, it receives electrons from phosphorene. Among all the investigated molecules, NO2 has the strongest interaction through hybridizing its frontier orbitals with the 3p orbital of phosphorene. The nontrivial and distinct charge transfer occurring between phosphorene and these physisorbed molecules not only renders phosphorene promising for application as a gas sensor, but also provides an effective route to modulating the polarity and density of carriers in phosphorene. In addition, the binding energy of H2 on phosphorene is found to be 0.13 eV/H2, indicating that phosphorene is suitable for both stable room-temperature hydrogen storage and its subsequent facile release.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant Phononic Anisotropy and Unusual Anharmonicity of Phosphorene: Interlayer Coupling and Strain Engineering

Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel nanoelectronic and optoelectronic applications. Phonons, as one of the most important collective excitations, are at the heart for the device performance, as their interactions with electrons and photons govern the carrier mobility and light-emitting efficiency of the material. Here, through a detailed first-principles study, it is demonstrated that monolayer phosphorene exhibits a giant phononic anisotropy, and remarkably, this anisotropy is squarely opposite to its electronic counterpart and can be tuned effectively by strain engineering. By sampling the whole Brillouin zone for the mono-layer phosphorene, several "hidden" directions are found, along which small-momentum phonons are "frozen" with strain and possess the smallest degree of anharmonicity. Unexpectedly, these "hidden" directions are intrinsically different from those usually studied armchair and zigzag directions. Light is also shed on the anisotropy of interlayer coupling of few-layer phosphorene by examining the rigid-layer vibrations. These highly anisotropic and strain-tunable characteristics of phosphorene offer new possibilities for its applications in thermal management, thermoelectronics, nanoelectronics and phononics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (2 to 5 layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscope (TEM) or scanning tunneling microscope (STM). Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

Using first-principles calculations, we study the electronic properties of few-layer phosphorene focusing on layer-dependent behavior of band gap, work function and band alignment and carrier effective mass. It is found that few-layer phosphorene shows a robust direct band gap character, and its band gap decreases with the number of layers following a power law. The work function decreases rapidly from monolayer (5.16 eV) to trilayer (4.56 eV), and then slowly upon further increasing the layer number. Compared to monolayer phosphorene, there is a drastic decrease of hole effective mass along the ridge (zigzag) direction for bilayer phosphorene, indicating a strong interlayer coupling and screening effect. Our study suggests that 1). Few-layer phosphorene with a layer-dependent band gap and a robust direct band gap character is promising for efficient solar energy harvest. 2). Few-layer phosphorene outperforms monolayer counterpart in terms of a lighter carrier effective mass, a higher carrier density and a weaker scattering due to enhanced screening. 3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Constructing Metallic Nanoroad on MoS2 Monolayer via Hydrogenation

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, how to construct a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or interconnect without compromising the mechanical and structural integrity of the monolayer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Flaw-driven Failure in Nanostructures

Understanding failure in nanomaterials is critical for the design of reliable structural materials and small-scale devices that have components or microstructural elements at the nanometer length scale. No consensus exists on the effect of flaws on fracture in bulk nanostructured materials or in nanostructures. Proposed theories include nanoscale flaw tolerance and maintaining macroscopic fracture relationships at the nanoscale with virtually no experimental support. We explore fracture mechanisms in nanomaterials via nanomechanical experiments on nanostructures with pre-fabricated surface flaws in combination with molecular dynamics simulations. Nanocrystalline Pt cylinders with diameters of 120 nm with intentionally introduced surface notches were created using a template-assisted electroplating method and tested in uniaxial tension in in-situ SEM. Experiments demonstrate that 8 out of 12 samples failed at the notches and that tensile failure strengths were 1.8 GPa regardless of whether failure occurred at or away from the flaw. These findings suggest that failure location was sensitive to the presence of flaws, while strength was flaw-insensitive. Molecular dynamics simulations support these observations and show that incipient plastic deformation commences via nucleation and motion of dislocations in concert with grain boundary sliding. We postulate that such local plasticity reduces stress concentration ahead of the flaw to levels comparable with the strengths of intrinsic microstructural features like grain boundary triple junctions, a phenomenon unique to nano-scale solids that contain an internal microstructural energy landscape. This mechanism causes failure to occur at the weakest link, be it an internal inhomogeneity or a surface feature with a high local stress.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Polarity Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons

Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer MoS2 sheet and nanoribbons. In contrast to the dramatic three orders of magnitude of deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS2 nanoribbons is comparable to that in monolayer MoS2 sheet, albeit oscillating with width. Surprisingly, a room-temperature transport polarity reversal is observed with μ of hole (h) and electron (e) being 200.52 (h) and 72.16 (e) cm2V-1s-1 in sheet, and 49.72 (h) and 190.89 (e) cm2V-1s-1 in 4 nm-wide nanoribbon. The robust magnitudes of μ and polarity reversal are attributable to the different characteristics of edge states inherent in MoS2 nanoribbons. Our study suggests that width-reduction together with edge engineering provide a promising route for improving the transport properties of MoS2 nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2

The quasiparticle (QP) band structures of both strainless and strained monolayer MoS$_{2}$ are investigated using more accurate many body perturbation \emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. By solving the Bethe-Salpeter equation (BSE) including excitonic effects on top of the partially self-consistent \emph{GW$_{0}$} (sc\emph{GW$_{0}$}) calculation, the predicted optical gap magnitude is in a good agreement with available experimental data. With increasing strain, the exciton binding energy is nearly unchanged, while optical gap is reduced significantly. The sc\emph{GW$_{0}$} and BSE calculations are also performed on monolayer WS$_{2}$, similar characteristics are predicted and WS$_{2}$ possesses the lightest effective mass at the same strain among monolayers Mo(S,Se) and W(S,Se). Our results also show that the electron effective mass decreases as the tensile strain increases, resulting in an enhanced carrier mobility. The present calculation results suggest a viable route to tune the electronic properties of monolayer transition-metal dichalcogenides (TMDs) using strain engineering for potential applications in high performance electronic devices.

0 citations0 reviewsNo code linkedOpen access