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Researcher profile

Hangbo Zhou

Hangbo Zhou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2022arXiv

Anharmonic quantum thermal transport across a van der Waals interface

We investigate the anharmonic phonon scattering across a weakly interacting interface by developing a quantum mechanics-based theory. We find that the contribution from anharmonic three-phonon scatterings to interfacial thermal conductance can be cast into Landauer formula with transmission function being temperature-dependent. Surprisingly, in the weak coupling limit, the transmission due to anharmonic phonon scattering is unbounded with increasing temperature, which is physically impossible for two-phonon processes. We further reveal that the anharmonic contribution in a real heterogeneous interface (e.g., between graphene and monolayer molybdenum disulfide) can dominate over the harmonic process even at room temperature, highlighting the important role of anharmonicity in weakly interacting heterogeneous systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Effects of high order interatomic potential on elastic phonon scatterings

Interatomic potentials beyond quadratic order provide scattering sources for phonon transport in lattice. By using a weakly-interacting interface model, we investigated the relation between the order of interatomic potential and the multiple-phonon scattering process. We find that high order interatomic potential not only causes multiple-phonon scattering processes, but also has significant impacts on elastic phonon scattering processes. Using fourth order potential as an example, we show that it can significantly affects elastic phonon scatterings, through the formation of localized phonons. Such impact is closely related to the correlations of interfacial atoms and it becomes more significant with increasing temperature. Our work suggests that it is insufficient to consider only quadratic potential to investigate elastic phonon transport.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (1) The SBH for the monolayer MoS2 with defects is universally higher than that for its defect-free counterpart. (2) S divacancy and MoS antisite defects increase the SBH to a larger extent than S monovacancy. (3) A defect located in the inner sublayer of MoS2, which is adjacent to Au substrate, increases the SBH to a larger extent than that in the outer sublayer of MoS2. (4) An increase in defect density increases the SBH. These findings indicate a large variation of SBH with the defect type, location, and concentration. We also compare our results with previously experimentally measured SBH for Au/MoS2 contact and postulate possible reasons for the large differences among existing experimental measurements and between experimental measurements and theoretical predictions. The findings and insights revealed here may provide practice guidelines for modulation and optimization of SBH in Au/MoS2 and similar heterojunctions via defect engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Three-terminal interface as a thermoelectric generator beyond Seebeck effect

We investigate thermoelectric transport through interfaces with inelastic scatterings by developing a quantum theory, which has been extensively validated by existing theories. We find that under temperature bias, while a two-terminal conductor-insulator interface behaves only as a thermal resistor, a three-terminal conductor-insulator-conductor interface can function as an electricity generator caused by phonon-mediated electron scatterings with heat-charge current separation. Unlike conventional thermoelectrics which is a property of a bulk caused by the Seebeck effect, this thermoelectric behavior is a property of an interface driven by electron-phonon scatterings.

0 citations0 reviewsNo code linkedOpen access