Researcher profile

Yong Su Kim

Yong Su Kim contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2015arXiv

Latent Instabilities in Metallic LaNiO3 Films by Strain Control of Fermi-Surface Topology

Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by misfit strain to change its fermiology. As tensile strain increases, the hole pocket centered at the A point elongates along the kz-axis and seems to become open, thus changing Fermi-surface (FS) topology from three- to quasi-two-dimensional. Concomitantly, the FS shape becomes flattened to enhance FS nesting. A FS superstructure with Q1 = (1/2,1/2,1/2) appears in all LNO films, while a tensile-strained LNO film has an additional Q2 = (1/4,1/4,1/4) modulation, indicating that some instabilities are present in metallic LNO films. Charge disproportionation and spin-density-wave fluctuations observed in other nickelates might be their most probable origins.

preprint2013arXiv

Dimensional crossover of the electronic structure in LaNiO3 ultrathin films: Orbital reconstruction, Fermi surface nesting, and the origin of the metal-insulator transition

Dimensionality control in the LaNiO3 (LNO) heterostructure has attracted attention due to its two-dimensional (2D) electronic structure was predicted to have an orbital ordered insulating ground state, analogous to that of the parent compound of high-Tc cuprate superconductors [P. Hansmann et al., Phys. Rev. Lett. 103, 016401 (2009)]. Here, we directly measured the electronic structure of LNO ultrathin films using in situ angle-resolved photoemission spectroscopy (ARPES). We recognized the dimensional crossover of the electronic structure around 3-unit cells (UC)-thick LNO film and observed the orbital reconstruction. However, complete orbital ordering was not achieved. Instead, we observed that the Fermi surface nesting effect became strong in the 2D LNO ultrathin film. These results indicated that the orbital reconstruction should be described by taking into account the strong nesting effect to search for the novel phenomena, such as superconductivity in 2D LNO heterostructure. In addition, the APRES spectra showed that the Fermi surface existed down to a 1-UC-thick film, which showed insulating behavior in transport measurements. We suggested that the metal-insulator transition in the transport properties may originate from Anderson localization.

preprint2011arXiv

Highly p-doped graphene obtained by fluorine intercalation

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .

preprint2010arXiv

Structure and Correlation Effects in Semiconducting SrTiO$_{3}$

We have investigated the effects of structure change and electron correlation on SrTiO$_{3}$ single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105$^\circ$K is manifested by a charge transfer from in-plane ($d_{yz}$ and $d_{zx}$) bands to out-of-plane ($d_{xy}$) band, which is opposite to the theoretical predictions. Along this second-order phase transition, we find a smooth evolution of the quasiparticle strength and effective masses. The in-plane band exhibits a peak-dip-hump lineshape, indicating a high degree of correlation on a relatively large (170 meV) energy scale, which is attributed to the polaron formation.

preprint2008arXiv

Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Appl. Phys. Letts. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are in agreement with electronic structural changes determined from optical transmission and X-ray absorption measurements. This work opens the way to exploiting oxygen vacancies and their complexes as a source of ferroelectricity in perovskite oxide thin films, including STO.