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Researcher profile

Young Jun Chang

Young Jun Chang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

9 published item(s)

preprint2015arXiv

Latent Instabilities in Metallic LaNiO3 Films by Strain Control of Fermi-Surface Topology

Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by misfit strain to change its fermiology. As tensile strain increases, the hole pocket centered at the A point elongates along the kz-axis and seems to become open, thus changing Fermi-surface (FS) topology from three- to quasi-two-dimensional. Concomitantly, the FS shape becomes flattened to enhance FS nesting. A FS superstructure with Q1 = (1/2,1/2,1/2) appears in all LNO films, while a tensile-strained LNO film has an additional Q2 = (1/4,1/4,1/4) modulation, indicating that some instabilities are present in metallic LNO films. Charge disproportionation and spin-density-wave fluctuations observed in other nickelates might be their most probable origins.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dimensional crossover of the electronic structure in LaNiO3 ultrathin films: Orbital reconstruction, Fermi surface nesting, and the origin of the metal-insulator transition

Dimensionality control in the LaNiO3 (LNO) heterostructure has attracted attention due to its two-dimensional (2D) electronic structure was predicted to have an orbital ordered insulating ground state, analogous to that of the parent compound of high-Tc cuprate superconductors [P. Hansmann et al., Phys. Rev. Lett. 103, 016401 (2009)]. Here, we directly measured the electronic structure of LNO ultrathin films using in situ angle-resolved photoemission spectroscopy (ARPES). We recognized the dimensional crossover of the electronic structure around 3-unit cells (UC)-thick LNO film and observed the orbital reconstruction. However, complete orbital ordering was not achieved. Instead, we observed that the Fermi surface nesting effect became strong in the 2D LNO ultrathin film. These results indicated that the orbital reconstruction should be described by taking into account the strong nesting effect to search for the novel phenomena, such as superconductivity in 2D LNO heterostructure. In addition, the APRES spectra showed that the Fermi surface existed down to a 1-UC-thick film, which showed insulating behavior in transport measurements. We suggested that the metal-insulator transition in the transport properties may originate from Anderson localization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)

Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data.

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preprint2011arXiv

Effective screening and the plasmaron bands in Graphene

Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.

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preprint2011arXiv

Electronic structure of graphene on single crystal copper substrates

The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $π$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Γ$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.

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preprint2011arXiv

Highly p-doped graphene obtained by fluorine intercalation

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Selective growth of perovskite oxides on SrTiO3 (001) by control of surface reconstructions

We report surface reconstruction (RC)-dependent growths of SrTiO3 and SrVO3 on a SrTiO3 (001) surface with two different coexisting surface RCs, namely (2x1) and c(6x2). Up to the coverage of several layers, epitaxial growth was forbidden on the c(6x2) RC under the growth conditions that permitted layer-by-layer epitaxial growth on the (2x1) RC. Scanning tunneling microscopy examination of the lattice structure of the c(6x2) RC revealed that this RC-selective growth mainly originated from the significant structural/stoichiometric dissimilarity between the c(6x2) RC and the cubic perovskite films. As a result, the formation of SrTiO3 islands was forbidden from the nucleation stage.

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preprint2010arXiv

Structure and Correlation Effects in Semiconducting SrTiO$_{3}$

We have investigated the effects of structure change and electron correlation on SrTiO$_{3}$ single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105$^\circ$K is manifested by a charge transfer from in-plane ($d_{yz}$ and $d_{zx}$) bands to out-of-plane ($d_{xy}$) band, which is opposite to the theoretical predictions. Along this second-order phase transition, we find a smooth evolution of the quasiparticle strength and effective masses. The in-plane band exhibits a peak-dip-hump lineshape, indicating a high degree of correlation on a relatively large (170 meV) energy scale, which is attributed to the polaron formation.

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preprint2009arXiv

Fundamental thickness limit of itinerant ferromagnetic SrRuO$_3$ thin films

We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease to a decrease in the density of states (N$_o$). Namely, in the thin film geometry, the hybridized Ru-d$_yz,zx$ orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N$_o$.

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