BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Yong-Hong Zhao

Yong-Hong Zhao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2021arXiv

Two-dimensional Dirac semiconductor and its material realization

We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electronic, magnetic, and optical properties of Mn-doped GaSb: a first-principles study

Half-metallic ferromagnets can produce fully spin-polarized conduction electrons and can be applied to fabricate spintronic devices. Thus, in this study, the electronic structure, magnetic properties, and optical properties of GaSb, which has exhibited half-metallicity, doped with Mn, a 3d transition metal, are calculated using the generalized gradient approximation and Heyd-Scuseria-Ernzerhof (HSE) functional. Ga$_{1-x}$Mn$_x$Sb ($x = 0.25, 0.5, 0.75$) materials exhibit ferromagnetic half-metallic properties and a high Curie temperature, indicating that this series can applied in spintronic devices. Meanwhile, they absorb strongly in the infrared band, suggesting that Ga$_{1-x}$Mn$_{x}$Sb also has potential applications in infrared photoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Type-I and type-II Nodal Lines Coexistence in the Antiferromagnetic monolayer CrAs$_{2}$

Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time reversal symmetry in magnetic system, nodal lines require protection by additional symmetries. Here, we report the discovery of antiferromagnetic type-I and type-II nodal lines coexist in the monolayer CrAs$_{2}$ based on a systematic first-principles calculation. Remarkably, the type-I nodal line in CrAs$_{2}$ form a concentric loop centered around the $Γ$ point is filling-enforced by nonsymmorphic analogue symmetry and robust against spin-orbital coupling. The type-II nodal lines, a kind of open nodal lines appear around the Fermi level, are protected by the mirror symmetry in the absence of spin-orbital coupling. The antiferromagnetic monolayer CrAs$_{2}$ proposed here may provide a platform for the correlation between magnetism and exotic topological phases.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Continuously tunable electronic structure of transition metal dichalcogenides superlattices

Two dimensional transition metal dichalcogenides (TMDC) have very interesting properties for optoelectronic devices. In this work we theoretically investigate and predict that superlattices comprised of MoS$_{2}$ and WSe$_{2}$ multilayers possess continuously tunable electronic structure having direct band gap. The tunability is controlled by the thickness ratio of MoS$_{2}$ versus WSe$_{2}$ of the superlattice. When this ratio goes from 1:2 to 5:1, the dominant K-K direct band gap is continuously tuned from 0.14 eV to 0.5 eV. The gap stays direct against -0.6% to 2% in-layer strain and up to -4.3% normal-layer compressive strain. The valance and conduction bands are spatially separated. These robust properties suggest that MoS$_{2}$ and WSe$_{2}$ multilayer superlattice should be an exciting emerging material for infrared optoelectronics.

0 citations0 reviewsNo code linkedOpen access