Continuously tunable electronic structure of transition metal dichalcogenides superlattices

Two dimensional transition metal dichalcogenides (TMDC) have very interesting properties for optoelectronic devices. In this work we theoretically investigate and predict that superlattices comprised of MoS$_{2}$ and WSe$_{2}$ multilayers possess continuously tunable electronic structure having direct band gap. The tunability is controlled by the thickness ratio of MoS$_{2}$ versus WSe$_{2}$ of the superlattice. When this ratio goes from 1:2 to 5:1, the dominant K-K direct band gap is continuously tuned from 0.14 eV to 0.5 eV. The gap stays direct against -0.6% to 2% in-layer strain and up to -4.3% normal-layer compressive strain. The valance and conduction bands are spatially separated. These robust properties suggest that MoS$_{2}$ and WSe$_{2}$ multilayer superlattice should be an exciting emerging material for infrared optoelectronics.

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