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Yizhong Huang

Yizhong Huang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Optical coherence of Er$^{3+}$:Y$_2$O$_3$ ceramics for telecommunication quantum technologies

We report an optical homogeneous linewidth of 580 $\pm$ 20 Hz of Er$^{3+}$:Y$_2$O$_3$ ceramics at millikelvin temperatures, narrowest so far in rare-earth doped ceramics. We show slow spectral diffusion of $\sim$2 kHz over a millisecond time scale. Temperature, field dependence of optical coherence and spectral diffusions reveal the remaining dephasing mechanism as elastic two-level systems in polycrystalline grain boundaries and superhyperfine interactions of Er$^{3+}$ with nuclear spins. In addition, we perform spectral holeburning and measure up to 5 s hole lifetimes. These spectroscopic results put Er$^{3+}$:Y$_2$O$_3$ ceramics as a promising candidate for telecommunication quantum memories and light-matter interfaces.

preprint2019arXiv

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

preprint2019arXiv

Phase-controllable growth of ultrathin 2D magnetic FeTe crystals

Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices.