Source author record

Yizheng Wu

Yizheng Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

7works
7topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2022arXiv

3D Instances as 1D Kernels

We introduce a 3D instance representation, termed instance kernels, where instances are represented by one-dimensional vectors that encode the semantic, positional, and shape information of 3D instances. We show that instance kernels enable easy mask inference by simply scanning kernels over the entire scenes, avoiding the heavy reliance on proposals or heuristic clustering algorithms in standard 3D instance segmentation pipelines. The idea of instance kernel is inspired by recent success of dynamic convolutions in 2D/3D instance segmentation. However, we find it non-trivial to represent 3D instances due to the disordered and unstructured nature of point cloud data, e.g., poor instance localization can significantly degrade instance representation. To remedy this, we construct a novel 3D instance encoding paradigm. First, potential instance centroids are localized as candidates. Then, a candidate merging scheme is devised to simultaneously aggregate duplicated candidates and collect context around the merged centroids to form the instance kernels. Once instance kernels are available, instance masks can be reconstructed via dynamic convolutions whose weights are conditioned on instance kernels. The whole pipeline is instantiated with a dynamic kernel network (DKNet). Results show that DKNet outperforms the state of the arts on both ScanNetV2 and S3DIS datasets with better instance localization. Code is available: https://github.com/W1zheng/DKNet.

preprint2022arXiv

Field free switching through bulk spin-orbit torque in L10-FePt films deposited on vicinal substrates

L10-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), which enables memory cells with sufficient thermal stability to scale down to 3 nm. The recently discovered "bulk" spin-orbit torques in L10-FePt provide an efficient and scalable way to manipulate the L10-FePt magnetization. However, the existence of external field during the switching limits its practical application, and therefore field-free switching of the L10-FePt is in highly demand. In this manuscript, we demonstrate the field-free switching of the L10-FePt by growing it on vicinal MgO (001) substrates. This method is different from previously established strategies, as it does not need to add other functional layers or create asymmetry in the film structure. We demonstrate the field-free switching is robust and can withstand strong field disturbance up to ~1 kOe. The dependence on vicinal angle, film thickness, and growth temperature demonstrated a wide operation window for the field-free switching of the L10-FePt. We confirmed that the physical origin of the field-free switching is the vicinal surface-induced the tilted anisotropy of L10-FePt. We quantitatively characterize the spin-orbit torques in the L10-FePt films, and found the spin-orbit torques are not significantly influenced by the lattice strain from vicinal substrates. Our results extend beyond the established strategies to realize field-free switching, and potentially could be applied to other magnetic and antiferromagnetic systems.

preprint2022arXiv

Measurement of DC Magneto-Optical Kerr Effect with Sensitivity of $10^{-7} \text{Rad}/\sqrt{\text{Hz}}$

A high-sensitive DC Magneto-Optical Kerr Effect (MOKE) apparatus is described in this letter. Via detailed analysis on several dominating noise sources, we have proposed solutions that significantly lower the MOKE noise, and a sensitivity of $1.5\times10^{-7} \text{rad}/\sqrt{\text{Hz}}$ is achieved with long-term stability. The sensitivity of the apparatus is tested by measuring a wedge-shaped Ni thin film on $\text{SiO}_2$ with Ni thickness varying from 0 to 3 nm. A noise floor of $1.5\times10^{-8}$ rad is demonstrated. The possibility of further improving sensitivity to $10^{-9}$ rad via applying ac modulation is also discussed.

preprint2021arXiv

Shock-wave-like emission of spin waves induced by interfacial Dzyaloshinskii-Moriya interaction

We investigated spin wave (SW) propagation and emission in thin film systems with strong interfacial Dzyaloshinskii-Moriya interaction (DMI) utilizing micromagnetic simulation. The effect of DMI on SW propagation is analogous to the flow of magnetic medium leading to the spin Doppler effect, and a spin-polarized current can enhance or suppress it. It is demonstrated that, for a Doppler velocity exceeding a critical value, a shock-wave-like emission of SWs with a cone-shape emerges from a magnetically irregular point as the cone apex. The cone angle is quantitatively determined by the DMI-induced Doppler velocity. Combining the interfacial DMI and the spin-polarized current, a constant SW emission by a static source is demonstrated, which provides a promising route to efficiently generate SWs with tunable frequency.

preprint2020arXiv

In-plane Néel wall chirality and orientation of interfacial Dzyaloshinskii-Moriya vector in magnetic films

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is of great interest as it can stabilize chiral spin structures in thin films. Experiments verifying the orientation of the interfacial DMI vector remain rare, in part due to the difficulty of separating vector components of DMI. In this study, Fe/Ni bilayers and Co/Ni multilayers were deposited epitaxially onto Cu(001) and Pt(111) substrates, respectively. By tailoring the effective anisotropy, spin reorientation transitions (SRTs) are employed to probe the orientation of the DMI vector by measuring the spin structure of domain walls on both sides of the SRTs. The interfacial DMI is found to be sufficiently strong to stabilize chiral Néel walls in the out-of-plane magnetized regimes, while achiral Néel walls are observed in the in-plane magnetized regimes. These findings experimentally confirm that the out-of-plane component of the DMI vector is insignificant in these fcc(001) and fcc(111) oriented interfaces, even in the presence of atomic steps.

preprint2016arXiv

Spin Hall effects in mesoscopic Pt films with high resistivity

The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 μΩ*cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in-situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: λ_pt<0.8 nm. The average product of λ_pt and the Pt spin Hall angle α_H is substantial: α_H*λ_pt=(0.142 +/- 0.040)nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films.

preprint2015arXiv

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.