Researcher profile

Yizhang Chen

Yizhang Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

AMO: Adaptive Muon Orthogonalization

Muon has recently emerged as a competitive alternative to AdamW for large-scale pre-training, with orthogonalization via Newton-Schulz (NS) iterations as its core operation. Existing Muon variants apply a uniform NS schedule to all parameter matrices, overlooking possible differences in orthogonalization difficulty and its impact on performance. Through a systematic empirical study, we show that this per-matrix heterogeneity is pervasive and largely determined by matrix geometry, which evolves dynamically across operator types, training stages, and network depths. As a result, uniform NS schedules can lead to uneven orthogonalization quality across the model. Motivated by these findings, we propose Adaptive Muon Orthogonalization (AMO), an observe-then-commit method that measures weight geometry by operator type early in training and then uses these signals to allocate the NS budget for the remainder of training. AMO delivers consistent improvements over uniform-schedule Muon across standard, prolonged, and continual pre-training, surpassing the strongest baseline by +0.76 on Llama3.1-1.4B and +0.51 on Qwen3-1.7B in average downstream performance of 12 evaluation tasks.

preprint2019arXiv

A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory

We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ devices exhibited high magnetoresistance (>120%) and reliable (error rate<10-4) bi-directional switching with 2 to 200 ns voltage pulses. The endurance of the devices at 9 K surpassed that at 300 K by three orders of magnitude under the same write conditions, functioning for more than 10^12 cycles with 10 ns write pulses. The critical switching voltage at 9 K was observed to increase by 33% to 93%, depending on pulse duration, compared to that at 350 K. Ferromagnetic resonance and magnetization measurements on blanket pMTJ film stacks suggest that the increased switching voltage is associated with an increase in effective magnetic anisotropy and magnetization of free layer with decreasing temperature. Our work demonstrates that CoFeB/MgO based pMTJs have great potential to enable cryogenic MRAM and that their low temperature magnetization and effective magnetic anisotropy can be further optimized to lower operating power and improve endurance.