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Researcher profile

Yiying Wu

Yiying Wu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-det

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Published work

6 published item(s)

preprint2016arXiv

High Current Density 2D/3D Esaki Tunnel Diodes

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Layer-Transferred MoS2/GaN PN Diodes

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of approximately 0.2 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission (IPE) measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

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preprint2014arXiv

Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ~2 x 1011 cm-2 and a room temperature mobility of 192 cm2/Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ~ 1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS2 films with excellent uniformity and high quality.

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preprint2014arXiv

Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were found to be crystalline based on x-ray diffraction measurements. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a p-n junction diode. Capacitance voltage measurements were used to determine the built-in voltage for the p-MoS2/n-SiC heterojunction p-n diode. The demonstration of heterogeneous material integration between 2D layered semiconductors and 3D SiC enables a new class of heterostructures.

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preprint2013arXiv

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

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preprint2013arXiv

Low frequency noise in chemical vapor deposited MoS2

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS2 devices than reported single-layer MoS2 FET. The extracted Hooge's parameter is one order of magnitude lower than CVD grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.

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