BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Yingying Wu

Yingying Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scimath.AGcond-mat.str-elmath-phmath.DGmath.GTmath.MPmath.NANumerical Analysisquant-ph

Catalog footprint

What is connected

13works
11topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2026arXiv

Skyrmion Quantum Diode Prototype: Bridging Micromagnetic Simulations and Quantum Models

Magnetic skyrmions are topologically protected spin textures known for their robustness against perturbations. Their topological stability makes them robust information carriers, ideal for tackling a key challenge in quantum computing: creating reliable, one-way links between different types of qubits. In this proof-of-concept study, we introduce a novel device - the skyrmion quantum diode - based on skyrmion qubits. Our approach combines classical micromagnetic simulations, achieving skyrmion diameters as small as 3 nm, with quantum circuit models inspired by superconducting qubits. In this work, we demonstrate: (i) unidirectional skyrmion transport via the skyrmion Hall effect in asymmetric junctions, spanning length scales from 20 nm down to 3 nm; (ii) potential compatibility with flux-tunable quantum architectures; and (iii) preliminary insights into anharmonicity in skyrmion-based qubit systems. These results establish both the operational feasibility and the scaling behavior necessary for a hybrid skyrmion-quantum platform. Our work outlines a path toward integrating skyrmion based quantum components into practical device architectures, enabling low-dissipation, unidirectional quantum information transport. This capability is crucial for scalable quantum computing, spintronic logic, and hybrid quantum systems, and opens opportunities for chipscale, pump-free isolators and directional quantum links that enhance readout fidelity, reduce cryogenic load, and support modular skyrmion-superconducting processors

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Moduli spaces of SUSY curves and their operads

This article generalizes the operad of moduli spaces of curves to SUSY curves. SUSY curves are algebraic curves with additional supersymmetric or supergeometric structure. Here, we focus on the description of the relevant category of graphs and its combinatorics as well as the construction of dual graphs of SUSY curves and the SUSY operad taking values in a category of moduli spaces of SUSY curves with Neveu-Schwarz and Ramond punctures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Surface Eigenvalues with Lattice-Based Approximation In comparison with analytical solution

In this paper, we propose a meshless method of computing eigenvalues and eigenfunctions of a given surface embedded in $\mathbb R^3$. We use point cloud data as input and generate the lattice approximation for some neighborhood of the surface. We compute the eigenvalues and eigenvectors of the cubic lattice graph as an approximation of the eigenvalues and eigenfunctions of the Laplace-Beltrami operator on the surface. We perform extensive numerical experiments on surfaces with various topology and compare our computed eigenvalues from point cloud surface with exact solutions and standard finite element methods using triangle mesh.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Comparison Theorems of Phylogenetic Spaces and the Moduli Spaces of Curves

Rapid developments in genetics and biology have led to phylogenetic methods becoming an important direction in the study of cancer and viral evolution. Although our understanding of gene biology and biochemistry has increased and is increasing at a remarkable rate, the theoretical models of genetic evolution still use the phylogenetic tree model that was introduced by Darwin in 1859 and the generalization to phylogenetic networks introduced by Grant in 1971. Darwin's model uses phylogenetic trees to capture the evolutionary relationships of reproducing individuals [6]; Grant's generalization to phylogenetic networks is meant to account for the phenomena of horizontal gene transfer [14]. Therefore, it is important to provide an accurate mathematical description of these models and to understand their connection with other fields of mathematics. In this article, we focus on the graph theoretical aspects of phylogenetic trees and networks and their connection to stable curves. We introduce the building blocks of evolutionary moduli spaces, the dual intersection complex of the moduli spaces of stable curves, and the categorical relationship between the phylogenetic spaces and stable curves in $\overline{\mathfrak{M}}_{0,n}(\mathbb{C})$ and $\overline{\mathfrak{M}}_{0,n}(\mathbb{R})$. We also show that the space of network topologies maps injectively into the boundary of $\overline{\mathfrak{M}}_{g,n}(\mathbb{C})$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Examples of singularity models for $\mathbb{Z}/2$ harmonic 1-forms and spinors in dimension 3

We use the symmetries of the tetrahedron, octahedron and icosahedron to construct local models for a $\mathbb{Z}/2$ harmonic 1-form or spinor in 3-dimensions near a singular point in its zero loci. The local models are $\mathbb{Z}/2$ harmonic 1-forms or spinors on $\mathbb{R}^3$ that are homogeneous with respect to rescaling of $\mathbb{R}^3$ with their zero locus consisting of four or more rays from the origin. The rays point from the origin to the vertices of a centered tetrahedron in one example; and they point from those of a centered octahedron and a centered icosahedron in two others.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explained the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. In this Letter, we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations for the Q valley electrons in FL transition metal disulfide (TMDs), as well as the first quantum Hall effect (QHE) in TMDCs. Our devices exhibit ultrahigh field-effect mobilities (~16,000 cm2V-1s-1 for FL WS2 and ~10,500 cm2V-1s-1 for FL MoS2) at cryogenic temperatures. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMD devices and a spin Zeeman effect in all even-layer TMD devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently, atomically thin black phosphorus (BP) has become a new member of the 2D materials family with high theoretical mobility and tunable bandgap structure. However, degradation of properties under atmospheric conditions and high-density charge traps in BP have largely limited its mobility (~400 cm2/Vs at room temperature) and thus restricted its future applications. Here, we report the fabrication of stable BN-BP-BN heterostructures by encapsulating atomically thin BP between hexagonal boron nitride (BN) layers to realize ultraclean BN-BP interfaces which allow a record-high field-effect mobility ~1350 cm2/Vs at room temperature and on-off ratios over 10^5. At low temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP 2D hole gas are observed at low magnetic fields. Importantly, the BN-BP-BN heterostructure can effectively avoid the quality degradation of BP in ambient condition.

0 citations0 reviewsNo code linkedOpen access