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Researcher profile

Tianyi Han

Tianyi Han contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2022arXiv

Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels

Transition metal dichalcogenides like 2H-NbSe2 in their two-dimensional (2D) form exhibit Ising superconductivity with the quasiparticle spins are firmly pinned in the direction perpendicular to the basal plane. This enables them to withstand exceptionally high magnetic fields beyond the Pauli limit for superconductivity. Using field-angle-resolved magnetoresistance experiments for fields rotated in the basal plane we investigate the field-angle dependence of the upper critical field (Hc2), which directly reflects the symmetry of the superconducting order parameter. We observe a six-fold nodal symmetry superposed on a two-fold symmetry. This agrees with theoretical predictions of a nodal topological superconducting phase near Hc2, together with a nematic superconducting state. We demonstrate that in NbSe2 such unconventional superconducting states can arise from the presence of several competing superconducting channels.

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preprint2022arXiv

Spectroscopy Signatures of Electron Correlations in a Trilayer Graphene/hBN Moiré Superlattice

ABC-stacked trilayer graphene/hBN moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. We report spectroscopy measurements of dual-gated TLG/hBN using Fourier transformed infrared photocurrent spectroscopy. We observed a strong optical transition between moiré mini-bands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 meV, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.

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preprint2021arXiv

Bridging the gap between atomically thin semiconductors and metal leads

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.

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preprint2020arXiv

Selection of strain and fitting schemes for calculating higher-order elastic constants

Criteria of selecting strain and fitting schemes are proposed for the calculation of higher-order elastic constants more efficiently, robustly and accurately. As demonstrated by the third-order elastic constants (TOECs) of diamond, the proposed method is 3-5 times faster than existing methods, and the range of strain for getting correct TOECs is expanded. In addition, our result provides an evidence for the inaccuracy of some previous experiments caused by higher-order effect, and the difference among experiments and several different theoretical methods is resolved. Finally, we give the recommend TOECs values for diamond.

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preprint2018arXiv

Intrinsic valley Hall transport in atomically thin MoS2

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.

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